Техническая Спецификация для Infineon Technologies N/A BFN 25 PNP Case type SOT 23 I(C) 0 BFN25
Модели
BFN25
BFN25, BFN27
Nov-30-2001
1
PNP Silicon High-Voltage Transistors
Suitable for video output stages in TV sets and
switching power supplies
switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BFN24, BFN26 (NPN)
Low collector-emitter saturation voltage
Complementary types: BFN24, BFN26 (NPN)
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
BFN25
BFN27
FKs
FLs
1 = B
1 = B
2 = E
2 = E
3 = C
3 = C
SOT23
SOT23
Maximum Ratings
Parameter
Symbol
BFN25
BFN27
Unit
Collector-emitter voltage
V
CEO
250
300
V
Collector-base voltage
V
CBO
250
300
Emitter-base voltage
V
EBO
5
5
DC collector current
I
C
200
mA
Peak collector current
I
CM
500
Base current
I
B
100
Peak base current
I
BM
200
Total power dissipation
,
T
S
= 74 °C
P
tot
360
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
210
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance