Техническая Спецификация для Fairchild Semiconductor N/A MMBTA06
Модели
MMBTA06
MP
SA0
6
/ MMBT
A0
6 / P
6 / P
Z
T
A
06 — NP
N General P
u
rpose Amplifier
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MPSA06 / MMBTA06 / PZTA06 Rev. B0
2
Electrical Characteristics
T
a
= 25°C unless otherwise noted
* Pulse Test: Pulse Width
≤ 300μs, Duty Cycle ≤ 2.0%
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage* I
C
= 1.0mA, I
B
= 0
80
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100
μA, I
C
= 0
4.0
V
I
CEO
Collector-Cutoff Current
V
CE
= 60V, I
B
= 0
0.1
μA
I
CBO
Collector-Cutoff Current
V
CB
= 80V, I
E
= 0
0.1
μA
On Characteristics
h
FE
DC Current Gain
I
C
= 10mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
100
100
100
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 100mA, I
B
= 10mA
0.25
V
V
BE(on)
Base-Emitter On Voltage
I
C
= 100mA, V
CE
= 1.0V
1.2
V
Small Signal Characteristics
f
T
Current Gain - Bandwidth Product
I
C
= 10mA, V
CE
= 2.0V,
f = 100MHz
100
MHz