Техническая Спецификация для Infineon Technologies N/A BCV 49 NPN Case type SOT 89 I(C) 0 BCV49
Модели
BCV49
2011-10-05
1
BCV29, BCV49
1
2
2
3
NPN Silicon Darlington Transistors
• For general AF applications
• High collector current
• High current gain
• Complementary types: BCV28, BCV48 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
• High collector current
• High current gain
• Complementary types: BCV28, BCV48 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
Package
BCV29
BCV49
BCV49
EF
EG
EG
1=B
1=B
1=B
2=C
2=C
2=C
3=E
3=E
3=E
SOT89
SOT89
SOT89
Maximum Ratings
Parameter
Parameter
Symbol
Value
Unit
Collector-emitter voltage
BCV29
BCV49
BCV29
BCV49
V
CEO
30
60
60
V
Collector-base voltage
BCV29
BCV49
BCV29
BCV49
V
CBO
40
80
80
Emitter-base voltage
V
EBO
10
Collector current
I
C
500
mA
Peak collector current, t
p
≤ 10 ms
I
CM
800
Base current
I
B
100
Peak base current
I
BM
200
Total power dissipation-
T
T
S
≤ 130 °C
P
tot
1
W
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150