Техническая Спецификация для Fairchild Semiconductor N/A MMBT4401
Модели
MMBT4401
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.1
0.3
1
3
10
30
100
300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
T
Y
P
IC
A
L
P
U
L
S
E
D
C
U
R
R
E
N
T
GA
IN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
1
10
100
500
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V
-
COL
L
E
C
TO
R-
E
M
IT
T
E
R VOL
T
A
G
E (
V
)
CE
S
A
T
25 °C
C
β
= 10
125 °C
- 40 °C
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
500
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
E
M
ITTER
VO
L
T
A
G
E
(V
)
BE
S
A
T
C
β
= 10
25 °C
125 °C
- 40 °C
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
BA
S
E
-E
M
IT
T
E
R
ON
V
O
L
T
AG
E
(
V
)
BE
(O
N
)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I
-
C
O
L
L
E
CT
OR
C
U
R
R
EN
T
(
n
A)
A
V
= 40V
CB
CB
O
°
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
0.1
1
10
100
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
C
A
P
A
CI
T
A
NC
E
(
p
F
)
f = 1 MHz
C ob
C
NPN General Purpose Amplifier
te
(continued)
2N440
1
/
MM
B
T
440
1