Техническая Спецификация для Nxp Semiconductors N/A BC 856 PNP Case type SOT 323 I(C) 0.2 BC856
Модели
BC856
BC 856W ... BC 860W
Semiconductor Group
2
Maximum Ratings
Description
Symbol
Unit
Collector-emitter voltage
V
CEO
V
Collector-base voltage
V
CBO
V
Collector-emitter voltage
V
CES
V
Collector current
I
C
mA
Total power dissipation,
T
S
= 115 ˚C
P
tot
mW
Junction temperature
T
j
˚C
Storage temperature range
T
stg
–65 to 150
˚C
Thermal Resistance
Junction - ambient
1)
R
th JA
≤
240
K/W
Emitter-base voltage
V
EBO
V
Collector peak current
I
CM
mA
100
5
5
5
250
150
80
50
30
200
Junction - soldering point
R
th JS
≤
105
K/W
65
45
30
80
50
30
BC 856W BC 857W
BC 860W
BC 858W
BC 859W
BC 859W