Техническая Спецификация для Fairchild Semiconductor N/A BD13516STU

© 2007 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BD135 / 137 / 139 Rev. 1.2.0

2 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The 

absolute maximum ratings are stress ratings only. Values are at T

C

 = 25°C unless otherwise noted.

Values are at T

C 

= 25

°C unless otherwise noted. 

 V

CBO

Collector-Base Voltage

BD135

45

V

BD137

60

BD139

80

 V

CEO

Collector-Emitter Voltage

BD135

45

V

BD137

60

BD139

80

 

V

EBO

Emitter-Base Voltage

5

V

 

I

C

Collector Current (DC)

1.5

A

 

I

CP

Collector Current (Pulse)

3.0

A

 

I

B

Base Current

0.5

A

 

P

C

Device Dissipation 

T

C 

= 25

°C

12.5

W

T

A

 = 25

°C

1.25

W

 T

J

Junction Temperature

150

°C

 T

STG

Storage Temperature

- 55 to +150

°C

V

CEO

(sus)

Collector-Emitter Sustaining 
Voltage

BD135

I

C 

= 30 mA, I

B 

= 0

 

45

V

BD137

60

BD139

80

I

CBO

Collector Cut-off Current

V

CB

 = 30 V, I

E

 = 0

0.1

μA

I

EBO

Emitter Cut-off Current

V

EB

 = 5 V, I

C

 = 0

10

μA

h

FE1

DC Current Gain

V

CE

 = 2 V, I

C

 = 5 mA

25

h

FE2

V

CE

 = 2 V, I

C

 = 0.5 A

25

h

FE3

V

CE

 = 2 V, I

C

 = 150 mA

40

250

V

CE

(sat)

Collector-Emitter Saturation Voltage

I

C 

= 500 mA, I

B 

= 50 mA

0.5

V

V

BE

(on)

Base-Emitter On Voltage

V

CE

 = 2 V, I

C

 = 0.5 A 

1

V

h

FE3

40 ~ 100

63 ~ 160

100 ~ 250