Техническая Спецификация для Infineon Technologies N/A BCV 61 B NPN Case type SOT 23 I(C BCV61B
Модели
BCV61B
2011-10-13
3
BCV61
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Base-emitter forward voltage
I
Base-emitter forward voltage
I
E
= 10 µA
I
E
= 250 mA
V
BES
0.4
-
-
-
-
-
1.8
V
Matching of transistor T1 and transistor T2
at I
at I
E2
= 0.5mA and V
CE1
= 5V
T
A
= 25 °C
T
A
= 150 °C
I
C1
/ I
C2
-
0.7
0.7
0.7
-
-
-
-
-
-
1.3
1.3
1.3
-
Thermal coupling of transistor T1 and
transistor T2
transistor T2
1)
T1: V
CE
= 5V
Maximum current of thermal stability of I
C1
I
E2
-
5
-
mA
AC characteristics for transistor T1
Transition frequency
I
Transition frequency
I
C
= 10 mA, V
CE
= 5 V, f = 100 MHz
f
T
-
250
-
MHz
Collector-base capacitance
V
V
CB
= 10 V, f = 1 MHz
C
cb
-
0.95
-
pF
Emitter-base capacitance
V
V
EB
= 0.5 V, f = 1 MHz
C
eb
-
9
-
Noise figure
I
I
C
= 200 µA, V
CE
= 5 V, R
S
= 2 k
Ω,
f = 1 kHz,
∆ f = 200 Hz
F
-
2
-
dB
Short-circuit input impedance
I
I
C
= 1 mA, V
CE
= 10 V, f = 1 kHz
h
11e
-
4.5
-
k
Ω
Open-circuit reverse voltage transf.ratio
I
I
C
= 1 mA, V
CE
= 10 V, f = 1 kHz
h
12e
-
2
-
10
-4
Short-circuit forward current transf.ratio
I
I
C
= 1 mA, V
CE
= 10 V, f = 1 kHz
h
21e
100
-
900
-
Open-circuit output admittance
I
I
C
= 1 mA, V
CE
= 10 V, f = 1 kHz
h
22e
-
30
-
µS
1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm