Техническая Спецификация для Fairchild Semiconductor N/A KSA1010YTU
Модели
KSA1010YTU
©2001 Fairchild Semiconductor Corporation
KSA101
0
Rev. A1, August 2001
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
Figure 5. Derating Curve of Safe Operating Areas
Figure 6. Power Derating
-0
-1
-2
-3
-4
-5
-0
-1
-2
-3
-4
-5
I
B
= -90mA
I
B
= -40mA
I
B
= -7
0mA
I
B
= -30mA
I
B
= -50mA
I
B
= -20mA
I
B
=
-8
0m
A
I
B
= -10mA
I
B
= -60mA
I
B
= -100mA
I
C
[A
], CO
LL
E
C
T
O
R CUR
RE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0.01
-0.1
-1
-10
1
10
100
1000
V
CE
= -5.0V
h
FE
, DC C
URRENT
GAI
N
I
C
[A], COLLECTOR CURRENT
-0.01
-0.1
-1
-10
-0.01
-0.1
-1
-10
V
CE
(sat)
V
BE
(sat)
I
C
= 10 I
B
V
CE
(s
a
t)[
V
],
V
BE
(s
a
t)
[V]SAT
U
R
A
T
IO
N
VO
L
T
A
G
E
I
C
[A], COLLECTOR CURRENT
-1
-10
-100
-0.01
-0.1
-1
-10
-100
100us
100m
s
S/
b L
im
ite
d
300us
10m
s
Dis
spat
ion Li
mite
d
I
C
Max. (Pulsed)
50us
1m
s
I
C
[A], C
O
L
L
ECT
O
R CU
RRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
200
0
20
40
60
80
100
120
140
160
S/
b LI
MIT
ED
D
ISS
IP
AT
IO
N
LI
M
IT
ED
dT
(%
),
I
C
DERAT
ING
T
C
[
o
C], CASE TEMPERATURE
0
25
50
75
100
125
150
175
200
0
10
20
30
40
50
P
C
[W
], PO
W
E
R
D
ISS
IP
AT
IO
N
T
C
[
o
C], CASE TEMPERATURE