Техническая Спецификация для Fairchild Semiconductor N/A BD438STU
Модели
BD438STU
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
BD434/
436/
438
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
* Pulse Test: PW=300
µ
s, duty Cycle=1.5% Pulsed
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
: BD434
: BD436
: BD438
: BD436
: BD438
I
C
= - 100mA, I
B
= 0
- 22
- 32
- 45
- 32
- 45
V
V
V
V
V
I
CBO
Collector Cut-off Current
: BD434
: BD436
: BD438
: BD436
: BD438
V
CB
= - 22V, I
E
= 0
V
CB
= - 32V, I
E
= 0
V
CB
= - 45V, I
E
= 0
- 100
- 100
- 100
- 100
- 100
µ
A
µ
A
µ
A
I
CEO
Collector Cut-off Current
: BD434
: BD436
: BD438
: BD436
: BD438
V
CE
= - 22V, V
BE
= 0
V
CE
= - 32V, V
BE
= 0
V
CE
= - 45V, V
BE
= 0
- 100
- 100
- 100
- 100
- 100
µ
A
µ
A
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= - 5V, I
C
= 0
- 1
mA
h
FE
* DC Current Gain
: BD434/436
: BD438
: ALL DEVICE
: BD434/436
: BD438
: BD438
: ALL DEVICE
: BD434/436
: BD438
V
CE
= - 5V, I
C
= - 10mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 1V, I
C
= - 2A
40
30
85
50
40
30
85
50
40
140
140
140
140
140
V
CE
(sat)
* Collector-Emitter Saturation Voltage
: BD434
: BD436
: BD438
: BD436
: BD438
I
C
= - 2A, I
B
= - 0.2A
- 0.2
- 0.2
- 0.2
- 0.2
- 0.2
- 0.5
- 0.5
- 0.6
- 0.5
- 0.6
V
V
V
V
V
V
BE
(on)
* Base-Emitter ON Voltage
: BD434
: BD436
: BD438
: BD436
: BD438
V
CE
= - 1V, I
C
= - 2A
- 1.1
- 1.1
- 1.2
- 1.1
- 1.2
V
V
V
V
V
f
T
Current Gain Bandwidth Product
V
CE
= - 1V, I
C
= - 250mA
3
MHz