Техническая Спецификация для Fairchild Semiconductor N/A FZT790A
Модели
FZT790A
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
FZT790A
Typical Characteristics
Figure 1. Base-Emitter Saturation Voltage
vs Collector Current
Figure 2. Base-Emitter On Voltage
vs Collector Current
Figure 3. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 4. Input/Output Capacitance
vs Reverse Bias Voltage
Figure 5. Current Gain vs Collector Current
Figure 6. Power Dissipation vs Ambient Temperature
0.001
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (A)
V
-B
A
S
E-
EM
ITTE
R
SA
TU
R
A
T
IO
N
V
O
L
T
A
G
E
(V)
C
BE
S
A
T
25°C
- 40°C
125°C
β = 10
β = 10
10
β = 10
β = 1
0
0.0001
0.001
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
I - COLLECTOR CURRENT (A)
V
-
B
A
SE
-E
M
IT
T
E
R
O
N
V
O
LT
AG
E (
V
)
C
BE
O
N
25°C
- 40°C
125°C
V = 2.0V
ce
β = 10
10
β = 10
β = 10
0.01
0.1
1
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
I - COLLECTOR CURRENT (A)
V
-
C
O
L
L
E
C
T
O
R
-E
M
IT
T
E
R
V
O
L
T
A
G
E
(V
)
CE
S
A
T
- 40°C
25°C
125°C
β =
β = 10
β = 10
10
0.1
0.5
1
10
20
50
100
0
50
100
150
200
250
300
350
400
V - COLLECTOR VOLTAGE (V)
CA
P
A
C
IT
A
N
C
E
(
p
f)
CE
V = 2.0V
ce
C
ibo
C
obo
f = 1.0MHz
β = 1
0
β = 10
β = 10
10
β = 10
β = 10
0.0001
0.001
0.01
0.1
1
10
0
100
200
300
400
500
600
700
800
900
1000
I - COLLECTOR CURRENT (A)
H
-
CU
RRE
NT
GA
IN
C
FE
25°C
125°C
- 40°C
V = 2.0V
ce
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
P
D
, P
O
W
E
R D
IS
S
IP
AT
IO
N
[W
]
TEMPERATURE [
O
C]