Техническая Спецификация для Fairchild Semiconductor N/A MJE340STU
Модели
MJE340STU
©2001 Fairchild Semiconductor Corporation
MJE
340
Rev. A1, February 2001
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area
Figure 4. Power Derating
1
10
100
1000
1
10
100
1000
V
CE
= 2V
h
FE
, DC C
URRENT
GAI
N
I
C
[A], COLLECTOR CURRENT
10
100
1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
= 10I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t),
V
CE
(s
a
t)
[V]
, SA
TURATI
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
1
10
100
0.01
0.1
1
10
10
µ
s
50
0
µ
s
1m
s
DC
I
C
[A
],
CO
L
L
ECT
O
R CURR
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
4
8
12
16
20
24
28
32
P
C
[W
], PO
W
E
R
D
ISS
IP
AT
IO
N
Tc[
o
C], CASE TEMPERATURE