Техническая Спецификация для Fairchild Semiconductor N/A PN2222ATA

Fairchild Semiconductor

Модели

PN2222ATA

PN2222A / MMBT2222A / PZT2222A

— NP

N General P

u

rpose Amplifier

© 2010 Fairchild Semiconductor Corporation

www.fairchildsemi.com

PN2222A / MMBT2222A / PZT2222A Rev. A3

2

Electrical Characteristics

T

a

= 25°C unless otherwise noted

* Pulse Test: Pulse Width

≤ 300μs, Duty Cycle ≤ 2.0%

Symbol

Parameter

Test Condition

Min.

Max.

Units

Off Characteristics

BV

(BR)CEO

Collector-Emitter Breakdown Voltage * I

C

= 10mA, I

B

= 0

40

V

BV

(BR)CBO

Collector-Base Breakdown Voltage

I

C

= 10

μA, I

E

= 0

75

V

BV

(BR)EBO

Emitter-Base Breakdown Voltage

I

E

= 10

μA, I

C

= 0

6.0

V

I

CEX

Collector Cutoff Current

V

CE

= 60V, V

EB(off)

= 3.0V

10

nA

I

CBO

Collector Cutoff Current

V

CB

= 60V, I

E

= 0

V

CB

= 60V, I

E

= 0, T

a

= 125

°C

0.01

10

μA
μA

I

EBO

Emitter Cutoff Current

V

EB

= 3.0V, I

C

= 0

10

nA

I

BL

Base Cutoff Current

V

CE

= 60V, V

EB(off)

= 3.0V

20

nA

On Characteristics

h

FE

DC Current Gain

I

C

= 0.1mA, V

CE

= 10V

I

C

= 1.0mA, V

CE

= 10V

I

C

= 10mA, V

CE

= 10V

I

C

= 10mA, V

CE

= 10V, T

a

= -55

°C

I

C

= 150mA, V

CE

= 10V *

I

C

= 150mA, V

CE

= 1V *

I

C

= 500mA, V

CE

= 10V *

35
50
75
35

100

50
40

300

V

CE(sat)

Collector-Emitter Saturation Voltage *

I

C

= 150mA, I

B

= 15mA

I

C

= 500mA, I

B

= 50mA

0.3
1.0

V
V

V

BE(sat)

Base-Emitter Saturation Voltage *

I

C

= 150mA, I

B

= 15mA

I

C

= 500mA, I

B

= 50mA

0.6

1.2
2.0

V
V

Small Signal Characteristics

f

T

Current Gain Bandwidth Product

I

C

= 20mA, V

CE

= 20V, f = 100MHz

300

MHz

C

obo

Output Capacitance

V

CB

= 10V, I

E

= 0, f = 1MHz

8.0

pF

C

ibo

Input Capacitance

V

EB

= 0.5V, I

C

= 0, f = 1MHz

25

pF

rb’C

c

Collector Base Time Constant

I

C

= 20mA, V

CB

= 20V, f = 31.8MHz

150

pS

NF

Noise Figure

I

C

= 100

μA, V

CE

= 10V,

R

S

= 1.0K

Ω, f = 1.0KHz

4.0

dB

Re(h

ie

)

Real Part of Common-Emitter
High Frequency Input Impedance

I

C

= 20mA, V

CE

= 20V, f = 300MHz

60

Ω

Switching Characteristics

t

d

Delay Time

V

CC

= 30V, V

EB(off)

= 0.5V,

I

C

= 150mA, I

B1

= 15mA

10

ns

t

r

Rise Time

25

ns

t

s

Storage Time

V

CC

= 30V, I

C

= 150mA,

I

B1

= I

B2

= 15mA

225

ns

t

f

Fall Time

60

ns