Техническая Спецификация для Fairchild Semiconductor N/A PZTA28
Модели
PZTA28
3
MPSA28/MMBTA28/PZTA28, Rev A
MPSA28 / MMBT
A28 / PZT
A28
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CES
Collector-Emitter Breakdown Voltage
I
C
= 100
µ
A, V
BE
= 0
80
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
µ
A, I
E
= 0
80
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
µ
A, I
C
= 0
12
V
I
CBO
Collector Cutoff Current
V
CB
= 60 V, I
E
= 0
100
nA
I
CES
Collector Cutoff Current
V
CE
= 60 V, V
BE
= 0
500
nA
I
EBO
Emitter Cutoff Current
V
EB
= 10 V, I
C
= 0
100
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 10 mA, V
CE
= 5.0 V
I
C
= 100 mA, V
CE
= 5.0 V
10,000
10,000
10,000
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 0.01 mA
I
C
= 100 mA, I
B
= 0.1 mA
1.2
1.5
1.5
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 100 mA, V
CE
= 5.0 V
2.0
V
SMALL SIGNAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 5.0,
f = 100 MHz
125
MHz
C
obo
Output Capacitance
V
CB
= 1.0 V, I
E
= 0, f = 1.0 MHz
8.0
pF
*
Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
NPN Darlington Transistor
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.001
0.01
0.1
0.2
0
20
40
60
80
100
I - COLLECTOR CURRENT (A)
h
-
T
YPI
C
A
L
PU
L
SED
C
U
R
R
E
N
T
G
A
IN
(
K
)
C
F
E
25 °C
125 °C
- 40 °C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collect or Current
1
10
100
1000
0
0.4
0.8
1.2
1.6
I - COLLECTOR CURRE NT (mA)
V
-
C
O
L
L
E
C
T
O
R
E
M
IT
T
E
R
V
O
L
TA
G
E
(
V
)
C
C
E
(S
A
T
)
- 40 °C
125 °C
ββββ
= 1000
25 °C