Техническая Спецификация для Fairchild Semiconductor N/A PN2222ATFR
Модели
PN2222ATFR
PN2222A / MMBT2222A / PZT2222A
— NP
N General P
u
rpose Amplifier
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
PN2222A / MMBT2222A / PZT2222A Rev. A3
3
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Emitter Transition and Output Capacitance
vs Reverse Bias Voltage
Typical Pulsed Current Gain
vs Collector Current
0.1
0.3
1
3
10
30
100
300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
T
Y
PI
CAL
PUL
SE
D CUR
R
E
N
T
G
A
IN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
1
10
100
500
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V
-
COLL
ECT
O
R-
E
M
ITTER VOL
T
AGE
(V)
C
E
S
A
T
25 캜
C
β = 10
125 캜
- 40 캜
°C
°C
°C
Base-Em itter Saturation
Voltage vs Collector Current
1
10
100
500
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (m A)
V
-
B
A
S
E
-E
M
ITTE
R
VOL
T
AG
E (
V
)
B
E
S
A
T
C
β = 10
25 캜
125 캜
- 40 캜
°C
°C
°C
I
C
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
BA
S
E
-E
M
IT
T
E
R
ON
V
O
L
T
AG
E
(
V
)
BE
(O
N
)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
I
C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I
-
COLLE
C
T
O
R CU
RRE
NT (
n
A)
A
V
= 40V
CB
CB
O
°
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
0.1
1
10
100
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
C
A
P
A
CI
T
A
NC
E
(
p
F
)
f = 1 MHz
C ob
C te