Техническая Спецификация для Fairchild Semiconductor N/A KST3904MTF
Модели
KST3904MTF
KST3904 —
NPN Epit
a
x
ial Silicon
T
ransis
tor
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
KST3904 Rev. A2
2
Typical Performance Characteristics
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Output Capacitance
Figure 4. Current Gain Bandwidth Product
0.1
1
10
100
0
40
80
120
160
200
240
V
CE
= 1V
h
FE
, DC
CUR
RENT GAIN
I
C
[A], COLLECTOR CURRENT
0.1
1
10
100
0.01
0.1
1
10
V
CE
(sat)
V
BE
(sat)
I
C
= 10 I
B
V
BE
(sat), V
CE
(s
a
t)[
V],
SA
TURA
TI
O
N
VOL
T
AGE
I
C
[mA], COLLECTOR CURRENT
1
10
100
0.1
1
10
I
E
= 0
f = 1MHz
C
ob
[
p
F
],
CAP
A
CI
T
A
NCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.1
1
10
100
10
100
1000
V
CE
= 20V
f
T
[M
H
z
],
CU
RR
ENT
G
A
IN
BAND
W
IDT
H
PR
O
D
U
C
T
I
C
[mA], COLLECTOR CURRENT