Техническая Спецификация для Fairchild Semiconductor N/A NZT45H8
Модели
NZT45H8
D45H
8 / NZT45H
8 — P
N
P Pow
e
r A
m
m
pl
ifi
e
r
© 1997 Fairchild Semiconductor Corporation
www.fairchildsemi.com
D45H8 / NZT45H8 Rev. 1.1.0
2
Thermal Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Notes:
3. PCB size: FR-4, 76 mm
x 114 mm
x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
Parameter
Max.
Unit
D45H8
NZT45H8
P
D
Total Device Dissipation
60.0
1.5
W
Derate Above 25
°C
480
12
mW/
°C
R
θJC
Thermal Resistance, Junction to Case
2.1
°C/W
R
θJA
Thermal Resistance, Junction to Ambient
62.5
83.3
°C/W
Symbol
Parameter
Conditions
Min.
Max.
Unit
V
(BR)CEO
Collector-Emitter Breakdown
Voltage
Voltage
I
C
= -100 mA, I
B
= 0
-60
V
I
CBO
Collector Cut-Off Current
V
CB
= -60 V, I
E
= 0
-10
μA
I
EBO
Emitter Cut-Off Current
V
EB
= -5.0 V, I
C
= 0
-100
μA
h
FE
DC Current Gain
I
C
= -2.0 A, V
CE
= -1.0 V
60
I
C
= -4.0 A, V
CE
= -1.0 V
40
V
CE
(sat)
Collector-Emitter Saturation
Voltage
Voltage
I
C
= -8.0 A, I
B
= -0.4 A
-1.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= -8.0 A, I
B
= -0.8 A
-1.5
V
V
BE
(on)
Base-Emitter On Voltage
I
C
= -10 mA, V
CE
= -2.0 V
-0.54
-0.65
V
f
T
Current Gain - Bandwidth Product
I
C
= -500 mA, V
CE
= -10 V,
f = 100 MHz
40
MHz