Техническая Спецификация для On Semiconductor N/A MJD 6039 = BDS 645 NPN Case type 369C I MJD6039 = BDS645
Модели
MJD6039 = BDS645
MJD6039
http://onsemi.com
4
V
CE
, COLLECT
OR−EMITTER
VOL
TAGE
(VOL
TS)
I
C
, COLLECTOR CURRENT (AMP)
Figure 7. DC Current Gain
Figure 8. Collector Saturation Region
Figure 9. “On” Voltages
0.04
300
0.06
0.2
2 k
800
4 k
h
FE
, DC CURRENT
GAIN
3 k
0.1
0.6
25
°C
−55
°C
1 k
0.4
1
6 k
400
600
2
4
0.04
I
C
, COLLECTOR CURRENT (AMP)
1.4
1
V
, VOL
TAGE
(VOL
TS)
2.2
1.8
0.6
0.2
0.06
0.2
2
0.1
0.6
0.4
1
4
3.4
I
B
, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.6
0.1
0.2
0.5
10
2
5
1
3
1
20
50
100
I
C
=
0.5 A
T
J
= 125
°C
V
CE
= 3 V
T
J
= 125
°C
1 A
2 A
4 A
T
J
= 25
°C
V
BE(sat)
@ I
C
/I
B
= 250
V
BE
@ V
CE
= 3 V
V
CE(sat)
@ I
C
/I
B
= 250
TYPICAL ELECTRICAL CHARACTERISTICS
0.04
I
C
, COLLECTOR CURRENT (AMP)
0.06
0.2
0
0.1
0.6
0.4
1
− 4.8
2
3
4
+ 0.8
− 4
− 3.2
− 2.4
− 1.6
− 0.8
Figure 10. Temperature Coefficients
V
, TEMPERATURE COEFFICIENTS (mV/
C)
°
°
θ
*APPLIED FOR I
C
/I
B
< h
FE
/3
25
°C to 150°C
− 55
°C to 25°C
25
°C to 150°C
25
°C to 150°C
q
VC
for V
BE
q
VC
for V
CE(sat)
10
−1
0
−0.4
+0.2 +0.4
+0.6
−0.6
−0.2
+0.8
+1
+1.2 +1.4
10
4
V
BE
, BASE−EMITTER VOLTAGE (VOLTS)
, COLLECT
OR
CURRENT
(A)μ
I C
10
3
10
2
10
1
10
0
REVERSE
FORWARD
10
5
Figure 11. Collector Cut−Off Region
V
CE
= 30 V
T
J
= 150
°C
100
°C
25
°C
Figure 12. Darlington Schematic
BASE
EMITTER
COLLECTOR
≈ 8 k
≈ 60
NPN
MJD6039