Техническая Спецификация для Samsung 250GB 850 EVO MZ-75E250B/EU
Модели
MZ-75E250B/EU
3
DATA SHEET
Rev. 1.0, DEC., 2014
Technical Specifications
Samsung SSD 850 EVO
Usage Application
Client PCs
Capacity
120GB, 250GB, 500GB, 1TB(1,000GB)
Dimensions (L
x
WxH)
100 x 69.85 x 6.8 (mm)
Interface
SATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s)
Form Factor
2.5 inch
Controller
120/250/500GB : Samsung MGX controller
1TB: Samsung MEX controller
NAND Flash Memory
Samsung 32 layer 3D V-NAND
DRAM Cache Memory
256MB (120GB) or 512MB(250GB&500GB) or 1GB (1TB) LPDDR2
Performance*
Sequential Read:
Max. 540 MB/s
Sequential Write**:
Max. 520 MB/s
4KB Random Read (QD1):
Max. 10,000 IOPS
4KB Random Write(QD1):
Max. 40,000 IOPS
4KB Random Read(QD32):
Max. 98,000 IOPS(500GB/1TB)
Max. 97,000 IOPS(250GB)
Max. 94,000 IOPS(120GB)
Max. 97,000 IOPS(250GB)
Max. 94,000 IOPS(120GB)
4KB Random Write(QD32):
Max. 90,000 IOPS(500GB/1TB)
Max. 88,000 IOPS(120GB/250GB)
Max. 88,000 IOPS(120GB/250GB)
Data Security
AES 256-bit Full Disk Encryption (FDE)
TCG/Opal V2.0, Encrypted Drive(IEEE1667)
Weight
Max. 66g (1TB)
Reliability
MTBF: 1.5 million hours
TBW
120/250GB: 75TBW
500GB/1TB: 150 TBW
Power
Consumption
***
Active Read/Write (Average): Max. 3.7W(1TB) / Max. 4.4W(1TB)
Idle: Max. 50mW
Idle: Max. 50mW
Device Sleep: 2mW(120/250/500GB), 4mW(1TB)
Supporting features
TRIM(Required OS support), Garbage Collection, S.M.A.R.T
Temperature
Operating:
Non-Operating:
0°C to 70°C
-40°C to 85°C
Humidity
5% to 95%, non-condensing
Vibration
Non-Operating:
20~2000Hz, 20G
Shock
Non-Operating:
1500G , duration 0.5m sec, 3 axis
Warranty
5 years limited
* Sequential performance measurements based on CrystalDiskMark v.3.0.1. Random performance measurements based on Iometer 2010.
Performance may vary based on SSD’s firmware version, system hardware & configuration.
Test system configuration : Intel Core i7-4790K @ 4.0GHz, DDR3 1600MHz 8GB, OS – Windows7 Ultimate x64 SP1, IRST 13.0.3.1001,
Chipset : Intel
Test system configuration : Intel Core i7-4790K @ 4.0GHz, DDR3 1600MHz 8GB, OS – Windows7 Ultimate x64 SP1, IRST 13.0.3.1001,
Chipset : Intel
® Z97
** Sequential Write performance measurements based on TurboWrite technology, The sequential write performances after TurboWrite
region are 150MB/s(120GB), 300MB/s(250GB), 500MB/s(500GB) and 520MB/s(1TB).
*** Power consumption measured with IOmeter 1.1.0 with Intel i7-4770K, DDR3 8GB, Intel
®DH87RL OS- Windows7 Ultimate x64 SP1