Техническая Спецификация для Kingston Technology 4GB, 1066MHz, DDR3, ECC Reg w/Par CL7, DIMM (Kit of 2) KVR1066D3D8R7SK2/4G
Модели
KVR1066D3D8R7SK2/4G
Memory Module Specifications
KVR1066D3D8R7SK2/4G
4GB (2GB 256M x 72-Bit x 2 pcs.) PC3-8500
CL7 Registered w/Parity 240-Pin DIMM Kit
CL7 Registered w/Parity 240-Pin DIMM Kit
Kingston.com
Document No. VALUERAM0758-001.B00 08/03/09 Page 1
DESCRIPTION
ValueRAM’s KVR1066D3D8R7SK2/4G is a kit of two 256M x
72-bit 2GB (2048MB) DDR3-1066MHz CL7 SDRAM (Synchro-
nous DRAM) registered w/parity, dual-rank memory modules,
based on eighteen 128M x 8-bit DDR3-1066MHz FBGA com-
ponents per module. Total kit capacity is 4GB (4096MB). Each
SPD is programmed to JEDEC standard latency 1066MHz
timing of 7-7-7 at 1.5V. Each 240-pin DIMM uses gold contact
fingers and requires +1.5V. The electrical and mechanical
specifications are as follows:
72-bit 2GB (2048MB) DDR3-1066MHz CL7 SDRAM (Synchro-
nous DRAM) registered w/parity, dual-rank memory modules,
based on eighteen 128M x 8-bit DDR3-1066MHz FBGA com-
ponents per module. Total kit capacity is 4GB (4096MB). Each
SPD is programmed to JEDEC standard latency 1066MHz
timing of 7-7-7 at 1.5V. Each 240-pin DIMM uses gold contact
fingers and requires +1.5V. The electrical and mechanical
specifications are as follows:
FEATURES
• JEDEC standard 1.5V ± 0.075V Power Supply
• VDDQ = 1.5V ± 0.075V
• 533MHz fCK for 1066Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 6,7,8,9,10
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 6(DDR3-1066)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
• VDDQ = 1.5V ± 0.075V
• 533MHz fCK for 1066Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 6,7,8,9,10
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 6(DDR3-1066)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does
not allow seamless read or write [either on the fly using A12
or MRS]
not allow seamless read or write [either on the fly using A12
or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE ≤ 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component
• PCB : Height 1.180” (30.00mm), double sided component
SPECIFICATIONS
CL(IDD)
7 cycles
Row Cycle Time (tRCmin)
50.625ns (min.)
Refresh to Active/Refresh
110ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin)
37.5ns (min.)
Power
3.195 W (operating per module)
UL Rating
94 V - 0
Operating Temperature
0° C to 85° C
Storage Temperature
-55° C to +100° C
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