Справочник Пользователя (HMT41GS6MFR8C-PB)СодержаниеDescription3Features3Ordering Information3Key Parameters4Speed Grade4Address Table4Pin Descriptions5Input/Output Functional Descriptions6Pin Assignments8Functional Block Diagram92GB, 256Mx64 Module(1Rank of x16)94GB, 512Mx64 Module(1Rank of x8)108GB, 1Gx64 Module(2Rank of x8)118GB, 1Gx64 Module(2Rank of x8)11Absolute Maximum Ratings12Absolute Maximum DC Ratings12DRAM Component Operating Temperature Range12AC & DC Operating Conditions13Recommended DC Operating Conditions13AC & DC Input Measurement Levels14AC and DC Input Levels for Single-Ended Command and Address Signals14AC and DC Input Levels for Single-Ended Signals15Vref Tolerances16AC and DC Logic Input Levels for Differential Signals17Differential signal definition17Differential swing requirements for clock (CK - CK) and strobe (DQS-DQS)18Single-ended requirements for differential signals19Differential Input Cross Point Voltage20Slew Rate Definitions for Single-Ended Input Signals21Slew Rate Definitions for Differential Input Signals22AC & DC Output Measurement Levels23Single Ended AC and DC Output Levels23Differential AC and DC Output Levels23Single Ended Output Slew Rate24Differential Output Slew Rate25Reference Load for AC Timing and Output Slew Rate26Overshoot and Undershoot Specifications27Address and Control Overshoot and Undershoot Specifications27Clock, Data, Strobe and Mask Overshoot and Undershoot Specifications28Refresh parameters by device density29Standard Speed Bins30DDR3-800 Speed Bins30DDR3-1066 Speed Bins31DDR3-1333 Speed Bins32DDR3-1600 Speed Bins33Speed Bin Table Notes34Environmental Parameters35IDD and IDDQ Specification Parameters and Test Conditions36IDD Specifications (Tcase: 0 to 95oC)482GB, 256M x 64 SO-DIMM: HMT425S6MFR6C484GB, 512M x 64 SO-DIMM: HMT451S6MFR8C488GB, 1G x 64 SO-DIMM: HMT41GS6MFR8C49Module Dimensions50256Mx64 - HMT425S6MFR6C50512Mx64 - HMT451S6MFR8C511Gx64 - HMT41GS6MFR8C52Размер: 958,3 КБСтраницы: 52Язык: EnglishПросмотреть
