Kingston Technology KVR1333D3D4R9SL/4G 数据表
Memory Module Specifications
KVR1333D3D4R9SL/4G
4GB 512M x 72-Bit PC3-10600
CL9 Registered w/Parity 240-Pin DIMM
CL9 Registered w/Parity 240-Pin DIMM
Kingston.com
Document No. VALUERAM0907-001.A00 03/05/10 Page 1
DESCRIPTION
This document describes ValueRAM’s 512M x 72-bit 4GB
(4096MB) DDR3-1333MHz CL9 SDRAM (Synchronous DRAM)
registered w/parity, VLP (Very Low Profile), dual-rank memory
module, based on eighteen 512M x 4-bit DDR3-1333MHz
SDRAMs in DDP (double die package) packages. The SPD is
programmed to JEDEC standard latency 1333MHz timing of
9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers and
requires +1.5V. The electrical and mechanical specifications
are as follows:
(4096MB) DDR3-1333MHz CL9 SDRAM (Synchronous DRAM)
registered w/parity, VLP (Very Low Profile), dual-rank memory
module, based on eighteen 512M x 4-bit DDR3-1333MHz
SDRAMs in DDP (double die package) packages. The SPD is
programmed to JEDEC standard latency 1333MHz timing of
9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers and
requires +1.5V. The electrical and mechanical specifications
are as follows:
FEATURES
• VDD=VDDQ=1.5V
• VDDSPD=3.3V to 3.6V
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and /DQS transition with CK
• VDDSPD=3.3V to 3.6V
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and /DQS transition with CK
transition
• DM masks write data-in at the both rising and falling edges of
the data strobe
• All addresses and control inputs except data, data strobes
and data masks latched on the rising edges of the clock
• Programmable CAS latency 5,6,7,8,9,10, and (11) supported
• Programmable additive latency 0,CL-1, and CL-2 supported
• Programmable CAS Write latency (CWL) = 5,6,7,8
• Programmable burst length 4/8 with both nibble sequential
• Programmable additive latency 0,CL-1, and CL-2 supported
• Programmable CAS Write latency (CWL) = 5,6,7,8
• Programmable burst length 4/8 with both nibble sequential
and interleave mode
SPECIFICATIONS
CL(IDD)
9 cycles
Row Cycle Time (tRCmin)
49.5ns (min.)
Refresh to Active/Refresh
110ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin)
36ns (min.)
Power
4.791 W (operating)
UL Rating
94 V - 0
Continued >>
• BL switch on the fly
• 8banks
• 8K refresh cycles /64ms
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• Write Levelization supported
• Auto Self Refresh supported
• 8 bit pre-fetch
• SPD with Integrated TS of Class B
• 8banks
• 8K refresh cycles /64ms
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• Write Levelization supported
• Auto Self Refresh supported
• 8 bit pre-fetch
• SPD with Integrated TS of Class B