Kingston Technology KVR1333D3D4R9SL/4G 数据表

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Memory Module Specifications
KVR1333D3D4R9SL/4G
4GB 512M x 72-Bit PC3-10600
CL9 Registered w/Parity 240-Pin DIMM
Kingston.com
Document No. VALUERAM0907-001.A00    03/05/10   Page 1
DESCRIPTION
This document describes ValueRAM’s 512M x 72-bit 4GB 
(4096MB) DDR3-1333MHz CL9 SDRAM (Synchronous DRAM) 
registered w/parity, VLP (Very Low Profile), dual-rank memory 
module, based on eighteen 512M x 4-bit DDR3-1333MHz 
SDRAMs in DDP (double die package) packages. The SPD is 
programmed to JEDEC standard latency 1333MHz timing of 
9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers and 
requires +1.5V. The electrical and mechanical specifications  
are as follows:
FEATURES
•  VDD=VDDQ=1.5V
•  VDDSPD=3.3V to 3.6V
•  Fully differential clock inputs (CK, CK) operation
•  Differential Data Strobe (DQS, DQS) 
•  On chip DLL align DQ, DQS and /DQS transition with CK 
transition
•  DM masks write data-in at the both rising and falling edges of 
the data strobe
•  All addresses and control inputs except data, data strobes 
and data masks latched on the rising edges of the clock
•  Programmable CAS latency 5,6,7,8,9,10, and (11) supported
•  Programmable additive latency 0,CL-1, and CL-2 supported
•  Programmable CAS Write latency (CWL) = 5,6,7,8
•  Programmable burst length 4/8 with both nibble sequential 
and interleave mode
SPECIFICATIONS
CL(IDD)  
9 cycles
Row Cycle Time (tRCmin)  
49.5ns (min.)
Refresh to Active/Refresh  
110ns (min.) 
Command Time (tRFCmin) 
Row Active Time (tRASmin)  
36ns (min.)
Power  
4.791 W (operating)
UL Rating  
94 V - 0
Continued >>
•  BL switch on the fly
•  8banks
•  8K refresh cycles /64ms
•  Driver strength selected by EMRS
•  Dynamic On Die Termination supported
•  Asynchronous RESET pin supported
•  ZQ calibration supported
•  Write Levelization supported
•  Auto Self Refresh supported
•  8 bit pre-fetch
•  SPD with Integrated TS of Class B