Maxim MAX9777 用户手册

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

V

DD

to GND ...........................................................................+6V

PV

DD

to V

DD

.......................................................................±0.3V

PGND to GND.....................................................................±0.3V
All Other Pins to GND.................................-0.3V to (V

DD

+ 0.3V)

Continuous Input Current (into any pin except power-supply
and output pins) ...............................................................±20mA
OUT__ Short Circuit to GND, V

DD

..........................................10s

Short Circuit Between OUT_+ and OUT_- .................Continuous

Continuous Power Dissipation (T

A

= +70°C)

28-Pin TQFN, Multilayer Board 
(derate 34.5mW/°C above +70°C) ..........................2758.6mW

Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C

(V

DD

= PV

DD

= 5.0V, GND = PGND = 0V, V

SHDN

= 5V, C

BIAS

= 1µF, R

IN

= R

F

= 15kΩ, R

L

= ∞. T

A

= T

MIN

to T

MAX

, unless otherwise

noted. Typical values are at T

A

= +25°C.) (Note 1)

Supply Voltage Range

V

DD

/PV

DD

Inferred from PSRR test

4.5

5.5

V

BTL mode, HPS = 0V, MAX9777/MAX9778

13

32

Quiescent Supply Current
(I

VDD

 + I

PVDD

)

I

DD

Single-ended mode, HPS = V

DD

7

18

mA

Shutdown Current

I

 

SHDN

SHDN = GND

10

50

µA

Switching Time

t

SW

Gain or input switching

10

µs

C

BIAS

 = 1µF

300

Turn-On Time

t

ON

C

BIAS

 = 0.1µF

30

ms

Thermal Shutdown Threshold

+160

o

C

Thermal Shutdown Hysteresis

15

o

C

Output Offset Voltage

V

OS

OUT_+ - OUT_-, A

V

 = 1V/V

±4

±32

mV

V

DD

 = 4.5V to 5.5V

75

100

f = 1kHz, V

RIPPLE

 = 200mV

P-P

82

Power-Supply Rejection Ratio
(Note 2)

PSRR

f = 20kHz, V

RIPPLE

 = 200mV

P-P

70

dB

R

L

 = 8

Ω

1.4

R

L

 = 4

Ω

2.6

Output Power

P

OUT

f

IN

 = 1kHz,

THD+N < 1%,
T

A

 = +25°C

R

L

 = 3

Ω

3

W

P

OUT

 = 1W, R

L

 = 8

Ω

0.005

Total Harmonic Distortion Plus
Noise

THD+N

f

IN

 = 1kHz, BW =

22Hz to 22kHz

P

OUT

 = 2W, R

L

 = 4

Ω

0.01

%

Signal-to-Noise Ratio

SNR

R

L

 = 8

Ω, P

OUT

 = 1W, BW = 22Hz to 22kHz

95

dB

Slew Rate

SR

1.6

V/µs

Maximum Capacitive Load Drive

C

L

No sustained oscillations

1

nF

Crosstalk

f

IN

 = 10kHz

73

dB

Into shutdown

-50

Click/Pop Level

K

CP

Peak voltage, A-weighted,
32 samples per second
(Notes 2, 6)

Out of shutdown

-65

dBV