Cypress CYD02S36VA 用户手册

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页码 28
CYD01S36V
CYD02S36V/36VA/CYD04S36V
CYD09S36V/CYD18S36V
FLEx36™ 3.3V 32K/64K/128K/256K/512 x 36
 Synchronous Dual-Port RAM
Cypress Semiconductor Corporation
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Document Number: 38-06076 Rev. *G
 Revised Decenber 09, 2008
Features
True dual-ported memory cells that enable simultaneous 
access of the same memory location
Synchronous pipelined operation
Family of 1-Mbit, 2-Mbit, 4-Mbit, 9-Mbit and 18-Mbit devices
Pipelined output mode allows fast operation
0.18 micron CMOS for optimum speed and power
High speed clock to data access 
3.3V low power
Active as low as 225 mA (typ.)
Standby as low as 55 mA (typ.)
Mailbox function for message passing
Global master reset
Separate byte enables on both ports
Commercial and industrial temperature ranges
IEEE 1149.1-compatible JTAG boundary scan
256 Ball FBGA (1-mm pitch) 
Counter wrap around control
Internal mask register controls counter wrap-around
Counter-interrupt flags to indicate wrap-around
Memory block retransmit operation
Counter readback on address lines
Mask register readback on address lines
Dual Chip Enables on both ports for easy depth expansion
Seamless migration to next-generation dual-port family
Functional Description
The FLEx36™ family includes 1-Mbit, 2-Mbit, 4-Mbit, 9-Mbit, and
18-Mbit pipelined, synchronous, true dual-port static RAMs that
are high speed, low power 3.3V CMOS. Two ports are provided,
permitting independent, simultaneous access to any location in
memory. A particular port can write to a certain location while
another port is reading that location. The result of writing to the
same location by more than one port at the same time is
undefined. Registers on control, address, and data lines allow for
minimal setup and hold time.
During a Read operation, data is registered for decreased cycle
time. Each port contains a burst counter on the input address
register. After externally loading the counter with the initial
address, the counter increments the address internally (more
details to follow). The internal Write pulse width is independent
of the duration of the R/W input signal. The internal Write pulse
is self-timed to allow the shortest possible cycle times.
A HIGH on CE0 or LOW on CE1 for one clock cycle powers down
the internal circuitry to reduce the static power consumption. One
cycle with chip enables asserted is required to reactivate the
outputs.
Additional features include: readback of burst-counter internal
address value on address lines, counter-mask registers to
control the counter wrap-around, counter interrupt (CNTINT)
flags, readback of mask register value on address lines,
retransmit functionality, interrupt flags for message passing,
JTAG for boundary scan, and asynchronous Master Reset
(MRST). 
The CYD18S36V devices in this family has limited features.
Please see Address Counter and Mask Register Operations
on page 5 for details.
Seamless Migration to Next-Generation Dual-Port 
Family
Cypress offers a migration path for all devices in this family to the
next-generation devices in the Dual-Port family with a compatible
footprint. Please contact Cypress Sales for more details.
Table 1.  Product Selection Guide
Density
1 Mbit
(32K x 36)
2 Mbit
(64K x 36)
4 Mbit
(128K x 36)
9 Mbit
(256K x 36)
18 Mbit
(512K x 36)
Part Number
CYD01S36V
CYD02S36V/36VA
CYD04S36V
CYD09S36V
CYD18S36V
Max. Speed (MHz)
167
167
167
167
133
Max. Access Time – Clock to Data 
(ns)
4.0
4.4
4.0
4.0
5.0
Typical Operating Current (mA)
225
225
225
270
315
Package
256 FBGA
(17 mm x 17 mm)
256 FBGA
(17 mm x 17 mm)
256 FBGA
(17 mm x 17 mm)
 256 FBGA
(17 mm x 17 mm)
256 FBGA
(23 mm x 23 mm)