Cypress CY62157ESL 用户手册
CY62157ESL MoBL
®
Document #: 001-43141 Rev. **
Page 3 of 12
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
device. These user guidelines are not tested.
Storage Temperature .................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Power Applied ............................................ –55°C to +125°C
Supply Voltage to Ground Potential..................–0.5V to 6.0V
DC Voltage Applied to Outputs
in High-Z State
in High-Z State
...........................................–0.5V to 6.0V
DC Input Voltage
........................................–0.5V to 6.0V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage............................................ >2001V
(MIL-STD-883, Method 3015)
(MIL-STD-883, Method 3015)
Latch up Current...................................................... >200 mA
Operating Range
Device
Range
Ambient
Temperature
V
CC
CY62157ESL
Industrial
–40°C to +85°C 2.2V–3.6V,
and
4.5V–5.5V
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
45 ns
Unit
Min
Typ
Max
V
OH
Output HIGH Voltage
2.2 < V
CC
< 2.7
I
OH
= –0.1 mA
2.0
V
2.7 < V
CC
< 3.6
I
OH
= –1.0 mA
2.4
4.5 < V
CC
< 5.5
I
OH
= –1.0 mA
2.4
V
OL
Output LOW Voltage
2.2 < V
CC
< 2.7
I
OL
= 0.1 mA
0.4
V
2.7 < V
CC
< 3.6
I
OL
= 2.1mA
0.4
4.5 < V
CC
< 5.5
I
OL
= 2.1mA
0.4
V
IH
Input HIGH Voltage
2.2 < V
CC
< 2.7
1.8
V
CC
+ 0.3
V
2.7 < V
CC
< 3.6
2.2
V
CC
+ 0.3
4.5 < V
CC
< 5.5
2.2
V
CC
+ 0.5
V
IL
Input LOW Voltage
2.2 < V
CC
< 2.7
–0.3
0.6
V
2.7 < V
CC
< 3.6
–0.3
0.8
4.5 < V
CC
< 5.5
–0.5
0.8
I
IX
Input Leakage Current
GND < V
I
< V
CC
–1
+1
μA
I
OZ
Output Leakage Current GND < V
O
< V
CC
, Output Disabled
–1
+1
μA
I
CC
V
CC
Operating Supply
Current
f = f
max
= 1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA,
CMOS levels
18
25
mA
f = 1 MHz
1.8
3
I
SB1
Automatic CE Power
down Current — CMOS
Inputs
down Current — CMOS
Inputs
CE > V
CC
− 0.2V, V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = f
max
(Address and Data Only),
f = 0 (OE, BHE, BLE and WE), V
CC
= V
CC(max)
2
8
μA
I
SB2
Automatic CE Power
down Current — CMOS
Inputs
down Current — CMOS
Inputs
CE > V
CC
– 0.2V, V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= V
CC(max)
2
8
μA
Notes
3. V
IL
(min) = –2.0V for pulse durations less than 20 ns.
4. V
IH
(max) = V
CC
+ 0.75V for pulse durations less than 20 ns.
5. Full Device AC operation assumes a 100
μs ramp time from 0 to V
CC
(min) and 200
μs wait time after V
CC
stabilization.