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页码 18
CY7C1302DV25
Document #: 38-05625 Rev. *A
Page 18 of 18
Document History Page
Document Title:CY7C1302DV25 9-Mb Burst of 2 Pipelined SRAM with QDR™ Architecture
Document Number:  38-05625
REV.
ECN NO.
Issue Date
Orig. of 
Change
Description of Change
**
253010
See ECN
SYT
New Data Sheet
*A
436864
See ECN
NXR
Converted from Preliminary to Final
Removed 133 MHz & 100 MHz from product offering
Included the Industrial Operating Range.
Changed C/C Description in the Features Section & Pin Description Table
Changed t
TCYC
 from 100 ns to 50 ns, changed t
TF
 from 10 MHz to 20 MHz and 
changed t
TH 
and t
TL 
from 40 ns to 20 ns in TAP AC Switching Characteristics 
table
Modified the ZQ pin definition as follows:
Alternately, this pin can be connected directly to V
DDQ
, which enables the 
minimum impedance mode
Included Maximum Ratings for Supply Voltage on V
DDQ
 Relative to GND
Changed the Maximum Ratings for DC Input Voltage from V
DDQ
 to V
DD
Modified the Description of I
X
 from Input Load current to Input Leakage 
Current on page # 13
Modified test condition in note# 14 from V
DDQ
 < V
DD 
to
 
V
DDQ 
≤ V
DD
Updated the Ordering Information table and replaced the Package Name 
Column with Package Diagram