Cypress CY7C1320CV18-167BZC 用户手册

18-Mbit DDR II SRAM 2-Word

Burst Architecture

•

198 Champion Court

•

San Jose

,

CA 95134-1709

•

408-943-2600

Document Number: 001-07160 Rev. *F

 Revised August 24, 2009

■

18-Mbit Density (1M x 18, 512K x 36)

■

267 MHz Clock for high Bandwidth

■

2-word Burst for reducing Address Bus Frequency 

■

Double Data Rate (DDR) Interfaces 

(data transferred at 534 MHz) at 267 MHz 

■

Two Input Clocks (K and K) for precise DDR Timing

❐

SRAM uses rising edges only

■

Two Input Clocks for Output Data (C and C) to minimize Clock 

Skew and Flight Time mismatches

■

Echo Clocks (CQ and CQ) simplify Data Capture in High Speed 

Systems

■

Synchronous internally Self-timed Writes

■

DDR II operates with 1.5 Cycle Read Latency when the DLL is 

enabled

■

Operates similar to a DDR I Device with one Cycle Read 

Latency in DLL Off Mode

■

1.8V Core Power Supply with HSTL Inputs and Outputs

■

Variable drive HSTL Output Buffers

■

Expanded HSTL Output Voltage (1.4V–V

DD

)

■

Available in 165-Ball FBGA Package (13 x 15 x 1.4 mm)

■

Offered in both Pb-free and non Pb-free Packages

■

JTAG 1149.1 compatible Test Access Port

■

Delay Lock Loop (DLL) for accurate Data Placement

CY7C1318CV18 – 1M x 18
CY7C1320CV18 – 512K x 36

The CY7C1318CV18, and CY7C1320CV18 are 1.8V

Synchronous Pipelined SRAMs equipped with DDR II archi-

tecture. The DDR II consists of an SRAM core with advanced

synchronous peripheral circuitry and a one-bit burst counter.

Addresses for read and write are latched on alternate rising

edges of the input (K) clock. Write data is registered on the rising

edges of both K and K. Read data is driven on the rising edges

of C and C if provided, or on the rising edge of K and K if C/C are

not provided. For CY7C1318CV18 and CY7C1320CV18, the

burst counter takes in the least significant bit of the external

address and bursts two 18-bit words (in the case of

CY7C1318CV18) of two 36-bit words (in the case of

CY7C1320CV18) sequentially into or out of the device.
Asynchronous inputs include an output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs, D) are tightly matched to the two

output echo clocks CQ/CQ, eliminating the need to capture data

separately from each individual DDR SRAM in the system

design. Output data clocks (C/C) enable maximum system

clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

Maximum Operating Frequency 

267

250

200

167

MHz

Maximum Operating Current 

x18

805

730

600

510

mA

x36

855

775

635

540