Cypress AN20639 用户手册
November 11, 2008
Document No. 001-20639 Rev. *C
1
Comparison between CY14B256L
and STK14C88-3 nvSRAM
Application Note Abstract
This application note compares the CY14B256L (0.25
μm) and the STK14C88-3 (0.8 μm) devices and presents the results.
Introduction
CY14B256L and STK14C88-3 are both 256K (32K x 8), 3V
nvSRAMs in two different technologies, 0.25
nvSRAMs in two different technologies, 0.25
μm and 0.8 μm
respectively. These parts are functionally similar and can be
used in the same applications. However there are differences
in parameters, which should be considered when replacing
one part with the other.
used in the same applications. However there are differences
in parameters, which should be considered when replacing
one part with the other.
The specifications in the data sheets of CY14B256L (0.25
μm) and STK14C88-3 (0.8 μm) are compared.
μm) and STK14C88-3 (0.8 μm) are compared.
lists
the differences between these two devices. This comparison
is not intended to be comprehensive, because there are sub-
tle differences that are not relevant in most applications.
is not intended to be comprehensive, because there are sub-
tle differences that are not relevant in most applications.
Most applications use autostore and autorecall features of
nvSRAM. To simplify the comparison, all electrical parame-
ters which may affect the application performance directly or
indirectly are considered. Designers must consider these dif-
ferences, and if necessary do appropriate changes in their
design.
nvSRAM. To simplify the comparison, all electrical parame-
ters which may affect the application performance directly or
indirectly are considered. Designers must consider these dif-
ferences, and if necessary do appropriate changes in their
design.
Only those specifications that differ between CY14B256L
(0.25
(0.25
μm) and STK14C88-3 (0.8 μm) nvSRAM are listed in
. These specifications may cause functional issues
when replacing one part with the other.
AN20639
Author: Shivendra Singh
Associated Project: No
Associated Part Family: CY14B256L and STK14C88-3
Associated Application Notes: None
Table 1. Comparison Table
Specification
CY14B256L (35 nsec)
STK14C88-3 (35 nsec)
Endurance
200,000 cycles
1,000,000 cycles
Retention
20 year
100 year
DC Electrical Characteristics
Vcc
2.7V min
3.6V max
3.0V min
3.6V max
Icc1
55 mA max
52 mA max
Icc3
10 mA max
9 mA max
Icc4
3 mA max
2 mA max
V
IH
2.0V min
Vcc + 0.3V max
2.2V min
Vcc + 0.5V max
Vcap
[
]
17 µF min
120 µF max
68 µF min
220 µF max
C
in
7 pF max
5 pF max
AC Switching Characteristics
t
OHA
3 ns min
5 ns min
t
LZCE
3 ns min
5 ns min
t
LZWE
3 ns min
5 ns min
Note
1.
STK14C88-3 applications usually specify the use of 68 µF or 100 µF capacitors, which fall within the range of the CY14B256L device.