Cypress CY7C1511KV18 用户手册
72-Mbit QDR™-II SRAM 4-Word
Burst Architecture
CY7C1511KV18, CY7C1526KV18
CY7C1513KV18, CY7C1515KV18
Cypress Semiconductor Corporation
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Document Number: 001-00435 Rev. *E
Revised March 30, 2009
Features
■
Separate Independent Read and Write Data Ports
❐
Supports concurrent transactions
■
333 MHz Clock for High Bandwidth
■
4-word Burst for Reducing Address Bus Frequency
■
Double Data Rate (DDR) Interfaces on both Read and Write
Ports (data transferred at 666 MHz) at 333 MHz
■
Two Input Clocks (K and K) for precise DDR Timing
❐
SRAM uses rising edges only
■
Two Input Clocks for Output Data (C and C) to minimize Clock
Skew and Flight Time mismatches
■
Echo Clocks (CQ and CQ) simplify Data Capture in High Speed
Systems
■
Single Multiplexed Address Input Bus latches Address Inputs
for Read and Write Ports
■
Separate Port Selects for Depth Expansion
■
Synchronous Internally Self-timed Writes
■
QDR™-II operates with 1.5 Cycle Read Latency when DOFF
is asserted HIGH
■
Operates similar to QDR-I Device with 1 Cycle Read Latency
when DOFF is asserted LOW
■
Available in x8, x9, x18, and x36 Configurations
■
Full Data Coherency, providing Most Current Data
■
Core V
DD
= 1.8V (±0.1V); IO V
DDQ
= 1.4V to V
DD
❐
Supports both 1.5V and 1.8V IO supply
■
Available in 165-ball FBGA Package (13 x 15 x 1.4 mm)
■
Offered in both Pb-free and non Pb-free Packages
■
Variable Drive HSTL Output Buffers
■
JTAG 1149.1 Compatible Test Access Port
■
Phase Locked Loop (PLL) for Accurate Data Placement
Configurations
CY7C1511KV18 – 8M x 8
CY7C1526KV18 – 8M x 9
CY7C1513KV18 – 4M x 18
CY7C1515KV18 – 2M x 36
CY7C1526KV18 – 8M x 9
CY7C1513KV18 – 4M x 18
CY7C1515KV18 – 2M x 36
Functional Description
The CY7C1511KV18, CY7C1526KV18, CY7C1513KV18, and
CY7C1515KV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR-II architecture. QDR-II architecture consists
of two separate ports: the read port and the write port to access
the memory array. The read port has dedicated data outputs to
support read operations and the write port has dedicated data
inputs to support write operations. QDR-II architecture has
separate data inputs and data outputs to completely eliminate
the need to “turnaround” the data bus that exists with common
IO devices. Each port can be accessed through a common
address bus. Addresses for read and write addresses are
latched on alternate rising edges of the input (K) clock. Accesses
to the QDR-II read and write ports are independent of one
another. To maximize data throughput, both read and write ports
are equipped with DDR interfaces. Each address location is
associated with four 8-bit words (CY7C1511KV18), 9-bit words
(CY7C1526KV18), 18-bit words (CY7C1513KV18), or 36-bit
words (CY7C1515KV18) that burst sequentially into or out of the
device. Because data can be transferred into and out of the
device on every rising edge of both input clocks (K and K and C
and C), memory bandwidth is maximized while simplifying
system design by eliminating bus “turnarounds”.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
CY7C1515KV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR-II architecture. QDR-II architecture consists
of two separate ports: the read port and the write port to access
the memory array. The read port has dedicated data outputs to
support read operations and the write port has dedicated data
inputs to support write operations. QDR-II architecture has
separate data inputs and data outputs to completely eliminate
the need to “turnaround” the data bus that exists with common
IO devices. Each port can be accessed through a common
address bus. Addresses for read and write addresses are
latched on alternate rising edges of the input (K) clock. Accesses
to the QDR-II read and write ports are independent of one
another. To maximize data throughput, both read and write ports
are equipped with DDR interfaces. Each address location is
associated with four 8-bit words (CY7C1511KV18), 9-bit words
(CY7C1526KV18), 18-bit words (CY7C1513KV18), or 36-bit
words (CY7C1515KV18) that burst sequentially into or out of the
device. Because data can be transferred into and out of the
device on every rising edge of both input clocks (K and K and C
and C), memory bandwidth is maximized while simplifying
system design by eliminating bus “turnarounds”.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Table 1. Selection Guide
Description
333 MHz
300 MHz
250 MHz
200 MHz
167 MHz
Unit
Maximum Operating Frequency
333
300
250
200
167
MHz
Maximum Operating Current
x8
600
560
490
430
380
mA
x9
600
560
490
430
380
x18
620
570
500
440
390
x36
850
790
680
580
510