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页码 6
Photomicrosensor (Transmissive)
 
EE-SX1107
1
Photomicrosensor (Transmissive)
EE-SX1107
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Features
• Ultra-compact with a 3.4-mm-wide sensor and a 1-mm-wide slot.
• PCB surface mounting type.
• High resolution with a 0.15-mm-wide aperture.
• RoHS Compliant.
■ Absolute Maximum Ratings (Ta = 25° C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25
° C.
2. Duty: 1/100; Pulse width: 0.1 ms
3. Complete soldering within 10 seconds for reflow soldering
and within 3 seconds for manual soldering.
■ Ordering Information
■ Electrical and Optical Characteristics (Ta = 25° C)
Internal Circuit
Terminal No.      Name
A    
Anode
K    
Cathode
C   
Collector
E Emitter
Recommended Soldering 
Pattern
Optical
axis
Cross section AA
Unless otherwise specified, the 
tolerances are 
±0.15 mm.
Item
Symbol
Rated value
Emitter
Forward current
I
F
25 mA (see note 1)
Pulse forward current I
FP
100 mA (see note 2)
Reverse voltage
V
R
5 V
Detector
Collector–Emitter
voltage
V
CEO
20 V
Emitter–Collector
voltage
V
ECO
5 V
Collector current
I
C
20 mA
Collector dissipation
P
C
75 mW (see note 1)
Ambient
temperature
Operating
Topr
–30
° C to 85° C
Storage
Tstg
–40
° C to 90° C
Reflow soldering
Tsol
240
° C (see note 3)
Manual soldering
Tsol
300
° C (see note 3)
Description
Model
Photomicrosensor (transmissive)
EE-SX1107
Item
Symbol
Value
Condition
Emitter
Forward voltage
V
F
1.1 V typ., 1.3 V max.
I
F
 = 5 mA
Reverse current
I
R
10 
µA max.
V
R
 = 5 V
Peak emission wavelength
λ
P
940 nm typ.
I
F
 = 20 mA
Detector
Light current
I
L
50 
µA min., 150 µA typ., 
500 
µA max.
I
F
 = 5 mA, V
CE
 = 5 V
Dark current
I
D
100 nA max.
V
CE
 = 10 V, 0 lx
Leakage current
I
LEAK
---
---
Collector–Emitter saturated voltage
V
CE
 (sat)
0.1 V typ., 0.4 V max.
I
F
 = 20 mA, I
L
 = 50 
µA
Peak spectral sensitivity wavelength
λ
P
900 nm typ.
---
Rising time
tr
10 
µs typ.
V
CC
 = 5 V, R
L
 = 1 k
Ω,
I
L
 = 100
µA
Falling time
tf
10 
µs typ.
V
CC
 = 5 V, R
L
 = 1 k
Ω,
I
L
 = 100
µA