Transcend 512MB, DDR2, PC5300, 667MHz, soDIMM 200Pin, 64bit, 1.8V,CL5, 32Mx16, Notebook Memory TS64MSQ64V6M 用户手册
产品代码
TS64MSQ64V6M
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200PIN DDR2 667 SO-DIMM
512MB With 32Mx16 CL5
Transcend Information Inc.
1
Description
The TS64MSQ64V6M is a 32M x 64bits DDR2-667
SO-DIMM. The TS64MSQ64V6M consists of 8pcs
32Mx16its DDR2 SDRAMs in 84 ball FBGA packages
and a 2048 bits serial EEPROM on a 200-pin printed
circuit board. The TS64MSQ64V6M is a Dual In-Line
Memory Module and is intended for mounting into 200-pin
edge connector sockets.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible
on both edges of DQS. Range of operation frequencies,
programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
Features
• RoHS compliant products.
• JEDEC standard 1.8V ± 0.1V Power supply
• VDDQ=1.8V ± 0.1V
• Max clock Freq: 333MHZ
• Posted CAS
• Programmable CAS Latency: 3,4,5
• Programmable Additive Latency :0, 1,2,3 and 4
• Write Latency (WL) = Read Latency (RL)-1
• Burst Length: 4,8(Interleave/nibble sequential)
• Programmable sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended
• JEDEC standard 1.8V ± 0.1V Power supply
• VDDQ=1.8V ± 0.1V
• Max clock Freq: 333MHZ
• Posted CAS
• Programmable CAS Latency: 3,4,5
• Programmable Additive Latency :0, 1,2,3 and 4
• Write Latency (WL) = Read Latency (RL)-1
• Burst Length: 4,8(Interleave/nibble sequential)
• Programmable sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended
data-strobe is an optional feature)
• Off-Chip Driver (OCD) Impedance Adjustment
• MRS cycle with address key programs.
• On Die Termination
• Serial presence detect with EEPROM
• MRS cycle with address key programs.
• On Die Termination
• Serial presence detect with EEPROM
Placement
PCB: 09-2400