Renesas 2SK3069 用户手册
2SK3069
Rev.11.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol
Ratings
Unit
Drain to source voltage
V
DSS
60 V
Gate to source voltage
V
GSS
±
20 V
Drain current
I
D
75
A
Drain peak current
I
D(pulse)
Note 1
300
A
Body-drain diode reverse drain current
I
DR
75
A
Avalanche current
I
AP
Note 3
50 A
Avalanche energy
E
AR
Note 3
214 mJ
Channel dissipation
Pch
Note 2
100 W
Channel temperature
Tch
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Notes: 1. PW
≤
10
µ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Ω
Electrical Characteristics
(Ta = 25°C)
Item Symbol
Min
Typ
Max
Unit
Test
Conditions
Drain to source breakdown voltage
V
(BR)DSS
60
—
—
V I
D
= 10 mA, V
GS
= 0
Gate to source leak current
I
GSS
— —
±
0.1
µ
A V
GS
=
±
20 V, V
DS
= 0
Zero gate voltage drain current
I
DSS
— — 10
µ
A V
DS
= 60 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0 — 2.5 V
I
D
= 1 mA, V
DS
= 10 V
Note 4
— 6.0 7.5 m
Ω
I
D
= 40 A, V
GS
= 10 V
Note 4
Static drain to source on state
resistance
resistance
R
DS(on)
— 8.0 12 m
Ω
I
D
= 40 A, V
GS
= 4 V
Note 4
Forward transfer admittance
|y
fs
| 50 80 — S
I
D
= 40 A, V
DS
= 10 V
Note 4
Input capacitance
Ciss
—
7100
—
pF
Output capacitance
Coss
—
1000
—
pF
Reverse transfer capacitance
Crss
—
280
—
pF
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Total gate charge
Qg
—
125
—
nC
Gate to source charge
Qgs
—
25
—
nC
Gate to drain charge
Qgd
—
25
—
nC
V
DD
= 25 V, V
GS
= 10 V,
I
D
= 75 A
Turn-on delay time
t
d(on)
— 60 — ns
Rise time
t
r
—
300
— ns
Turn-off delay time
t
d(off)
— 520 — ns
Fall time
t
f
—
330
— ns
V
GS
= 10 V, I
D
= 40 A,
R
L
= 0.75
Ω
Body–drain diode forward voltage
V
DF
— 1.05 — V
I
F
= 75A, V
GS
= 0
Body–drain diode reverse recovery
time
time
t
rr
— 90 — ns
I
F
= 75A, V
GS
= 0
di
F
/ dt = 50 A/
µ
s
Note: 4. Pulse
test