Motorola CPCI-6115 用户手册
System Memory
Functional Description
CPCI-6115 CompactPCI Single Board Computer Installation and Use (6806800A68D)
79
4.3.5
System Memory
The CPCI-6115 consists of up to three banks of Double-Data-Rate SDRAMs. DDR SDRAM
supports two data transfers per clock cycle. The base memory device is a standard monolithic
DDR SDRAM, 8-bits wide, in a 66-pin TSOPII package. The CPCI-6115 can be populated with
up to three banks of memory onboard (nine devices per bank). One or two banks can be
populated with standard single DDR devices. If three banks are populated, chip-stacking
technology is used on the top side to accommodate two banks in a single-bank footprint. When
using the stacked parts, the two stacked banks (0 and 2) are identical, so a single SPD
EEPROM is used for them.
supports two data transfers per clock cycle. The base memory device is a standard monolithic
DDR SDRAM, 8-bits wide, in a 66-pin TSOPII package. The CPCI-6115 can be populated with
up to three banks of memory onboard (nine devices per bank). One or two banks can be
populated with standard single DDR devices. If three banks are populated, chip-stacking
technology is used on the top side to accommodate two banks in a single-bank footprint. When
using the stacked parts, the two stacked banks (0 and 2) are identical, so a single SPD
EEPROM is used for them.
All memory configurations operate at DDR226 (133 MHz CLK).
WE[3:0],
DP[3:0]
X
X
DRAM PLL N
Divider [7:4],
[3:0]
Divider [7:4],
[3:0]
X
Not used in sync mode
BADR[0]
Resistor
1
DRAM PLL NP
X
Not used in sync mode
BADR[1]
Resistor
1
DRAM PLL
HIKVCO
HIKVCO
X
Not used in sync mode
BADR[2]
Resistor
1
DRAM PLL NP
0
PLL power down
1
PLL power up
(normal operation)
TxD0[6:1]
X
X
DRAM PLL M
Divider
Divider
X
Not used in sync mode
TxD0[7]
Resistor
0
JTAG Pad Calib
Bypass
Bypass
0
Normal Operation
1
Bypass pad calibration
TxD1[1]
Resistor
0
Core PLL Bypass
0
Normal Operation
1
Bypass the core’s PLL
TxD1[4:2]
Resistors
000
Core PLL
Control
000
Tuning of the core PLL clock
tree.
tree.
Table 4-3 MV64360 Power-Up Configuration Settings (continued)
Device AD
Bus Signal
Bus Signal
Select
Option
Default
Power-Up
Setting
Description
State of Bit vs. Function
Table 4-4 System Memory Options
Organization
Memory Device
Device
Size
Size
Bank Size
32 MB x 8
K4H560838F-TCB3 (133 MHz, CL=2.5)
256 MB
256 MB
64 MB x 8
K4H510838B-TCB3 (133 MHz, CL=2.5)
512 MB
512 MB
128 MB x 8
K4H1G0738M-TCB0 (133 MHz, CL=2.5)
K4H1G0838M-TCB0 (133 MHz, CL=2.5)
1 GB
Two banks of
512 MB
512 MB