Transcend 256MB Extensa 2600serie TS32MSQ64V4M 用户手册
产品代码
TS32MSQ64V4M
T
T
T
S
S
S
3
3
3
2
2
2
M
M
M
S
S
S
Q
Q
Q
6
6
6
4
4
4
V
V
V
4
4
4
M
M
M
200PIN DDR2 400 SO-DIMM
256MB With 32Mx16 CL3
Transcend Information Inc.
1
Description
The TS32MSQ64V4M is a 32M x 64bits DDR2-400
SO-DIMM. The TS32MSQ64V4M consists of 4pcs
32Mx16 bits DDR2 SDRAMs in 84 ball FBGA packages
and a 2048 bits serial EEPROM on a 200-pin printed
circuit board. The TS32MSQ64V4M is a Dual In-Line
Memory Module and is intended for mounting into 200-pin
edge connector sockets.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible
on both edges of DQS. Range of operation frequencies,
programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
Features
• RoHS compliant products.
• JEDEC standard 1.8V ± 0.1V Power supply
• VDDQ=1.8V ± 0.1V
• Max clock Freq: 200MHZ; 400Mb/s/Pin.
• Posted CAS
• Programmable CAS Latency: 3,4,5
• Programmable Additive Latency :0, 1,2,3 and 4
• Write Latency (WL) = Read Latency (RL)-1
• Burst Length: 4,8(Interleave/nibble sequential)
• Programmable sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended
• JEDEC standard 1.8V ± 0.1V Power supply
• VDDQ=1.8V ± 0.1V
• Max clock Freq: 200MHZ; 400Mb/s/Pin.
• Posted CAS
• Programmable CAS Latency: 3,4,5
• Programmable Additive Latency :0, 1,2,3 and 4
• Write Latency (WL) = Read Latency (RL)-1
• Burst Length: 4,8(Interleave/nibble sequential)
• Programmable sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended
data-strobe is an optional feature)
• Off-Chip Driver (OCD) Impedance Adjustment
• MRS cycle with address key programs.
• On Die Termination
• Serial presence detect with EEPROM
• MRS cycle with address key programs.
• On Die Termination
• Serial presence detect with EEPROM
Placement
A
B
D
E
C
F
G
H
I
J
K
PCB: 09-2400