Kingston Technology 3GB 1866MHz DDR3 Non-ECC CL9 (9-9-9-27) DIMM (Kit of 3) Intel XMP KHX14900D3K3/3GX 数据表
产品代码
KHX14900D3K3/3GX
Memory Module Specification
Document No. 4805080-001.A00
10/23/08
KHX14900D3K3/3GX
3GB (1GB 128M x 64-Bit x 3 pcs.) PC3-14900
Triple-Channel CL9 240-Pin DIMM Kit
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T E C H N O L O G Y
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N
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Y
Keyed
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d
DESCRIPTION:
Kingston's KHX14900D3K3/3GX is a triple-channel kit of three 128M x 64-bit 1GB (1024MB) DDR3-1866 CL9
SDRAM (Synchronous DRAM) memory modules, based on eight 128M x 8-bit DDR3 FBGA components per module.
Each module kit supports Intel
SDRAM (Synchronous DRAM) memory modules, based on eight 128M x 8-bit DDR3 FBGA components per module.
Each module kit supports Intel
®
XMP (Extreme Memory Profiles). Each module kit has been tested to run at DDR3-
1866MHz at a latency timing of 9-9-9 at 1.65V. The SPDs are programmed to JEDEC standard latency DDR3-1333Mhz
timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers and requires +1.5V. The JEDEC standard
electrical and mechanical specifications are as follows:
timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers and requires +1.5V. The JEDEC standard
electrical and mechanical specifications are as follows:
FEATURES:
JEDEC standard 1.5V ± 0.075V Power Supply
VDDQ = 1.5V ± 0.075V
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 6,7,8,9
Posted CAS
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 9(DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4
which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), single sided component
PERFORMANCE:
CL(IDD)
9 cycles
Row Cycle Time (tRCmin)
49.5ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin)
110ns
Row Active Time (tRASmin)
36ns (min.)
Power
1.296 W (operating per module)
UL Rating
94 V - 0
Operating Temperature
0
o
C to 85
o
C
Storage Temperature
-55
o
C to +100
o
C