Kingston Technology 2GB DDR3 1333 MHz Kit KHX1333C7AD3K2/2G 数据表

Memory Module Specifications

2GB (1GB 128M x 64-Bit x 2 pcs.) DDR3-1333MHz 
CL7 240-Pin DIMM Kit

Kingston.com

Document No. 4805839-001.B00    07/18/11    Page 1

Kingston’s KHX1333C7AD3K2/2G is a kit of two 128M x 
64-bit (1GB) DDR3-1333MHz CL7 SDRAM (Synchronous 
DRAM) memory modules, based on eight 128M x 8-bit DDR3 
FBGA components per module. Total kit capacity is 2GB. 
Each module kit has been tested to run at DDR3-1333MHz 
at a low latency timing of 7-7-7-20 at 1.65V. The SPDs are 
programmed to JEDEC standard latency DDR3-1333MHz 
timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact 
fingers and requires +1.5V. The JEDEC standard electrical 
and mechanical specifications are as follows:

CL(IDD)  

9 cycles

Row Cycle Time (tRCmin)  

49.5ns (min.)

Refresh to Active/Refresh  

110ns 

Command Time (tRFCmin) 

Row Active Time (tRASmin)  

36ns (min.)

Power  

1.080 W (operating per module)

UL Rating  

94 V - 0

Operating Temperature  

0° C to 85° C

Storage Temperature  

-55° C to +100° C

•  JEDEC standard 1.5V ± 0.075V Power Supply
•  VDDQ = 1.5V ± 0.075V
•  667MHz fCK for 1333Mb/sec/pin
•  8 independent internal bank
•  Programmable CAS Latency: 5,6,7,8,9,10
•  Posted CAS
•  Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
•  Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
•  8-bit pre-fetch
•  Burst Length: 8 (Interleave without any limit, sequential with 

starting address “000” only), 4 with tCCD = 4 which does not al-
low seamless read or write [either on the fly using A12 or MRS]

•  Bi-directional Differential Data Strobe
•  Internal(self) calibration : Internal self calibration through ZQ 

pin (RZQ : 240 ohm ± 1%)

•  On Die Termination using ODT pin
•  Average Refresh Period 7.8us at lower than TCASE 85°C, 

3.9us at 85°C < TCASE ≤ 95°C

•  Asynchronous Reset
•  PCB : Height 1.180” (30.00mm), single sided component

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