Kingston Technology Genesis 8GB (2x4GB) DDR3-1600MHz KHX1600C9D3K2/8G 数据表

8GB (4GB 512M x 64-Bit x 2 pcs.)
DDR3-1600 CL9 240-Pin DIMM Kit

Kingston's KHX1600C9D3K2/8G is a kit of two 512M x 64-bit

(4GB) DDR3-1600 CL9 SDRAM (Synchronous DRAM), 2Rx8

memory modules, based on sixteen 256M x 8-bit FBGA compo-

nents per module. Total kit capacity is 8GB. Each module kit

has been tested to run at DDR3-1600 at a low latency timing of

9-9-9-27 at 1.65V.The SPD's are programmed to JEDEC

standard latency DDR3-1333 timing of 9-9-9. This 240-pin

DIMM uses gold contact fingers. The JEDEC electrical and

mechanical specifications are as follows:

CL(IDD)

9 cycles

Row Cycle Time (tRCmin)

49.5ns (min.)

Refresh to Active/Refresh

160ns (min.)

Command Time (tRFCmin)

Row Active Time (tRASmin)

36ns (min.)

Power (Operating)

1.410 W*

UL Rating

94 V - 0

Operating Temperature

0

o

 C to 85

o

 C

Storage Temperature

-55

o

 C to +100

o

 C

*Power will vary depending on the SDRAM used.

•

JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply

•

VDDQ = 1.5V (1.425V ~ 1.575V)

•

667MHz fCK for 1333Mb/sec/pin

•

8 independent internal bank

•

Programmable CAS Latency: 9, 8, 7, 6

•

Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

•

Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)

•

8-bit pre-fetch

•

Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]

•

Bi-directional Differential Data Strobe

•

Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)

•

On Die Termination using ODT pin

•

Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C

•

Asynchronous Reset

•

PCB : Height 1.180” (30.00mm), double  sided  component

Memory Module Specifi cations

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