Kingston Technology 2GB DDR3 1333MHz Kit KVR1333D3N9/2GKF 数据表

产品代码
KVR1333D3N9/2GKF
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Memory Module Specifications
KVR1333D3N9/2GKF
2GB 256M x 64-Bit PC3-10600
CL9 240-Pin DIMM
Kingston.com
Document No. VALUERAM0943-001.A00    11/05/10   Page 1
DESCRIPTION
This document describes ValueRAM’s 256M x 64-bit (2GB) 
DDR3-1333 CL9 SDRAM (Synchronous DRAM) memory  
module, based on sixteen 128M x 8-bit DDR3-1333 FBGA  
components. The SPD is programmed to JEDEC standard  
latency 1333MHz timing of 9-9-9 at 1.5V. This 240-pin DIMM 
uses gold contact fingers and requires +1.5V. The electrical  
and mechanical specifications are as follows:
FEATURES
•  JEDEC standard 1.5V ± 0.075V Power Supply
•  VDDQ = 1.5V ± 0.075V
•  667MHz fCK for 1333Mb/sec/pin
•  8 independent internal bank
•  Programmable CAS Latency: 6,7,8,9,10
•  Posted CAS
•  Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
•  Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
•  8-bit pre-fetch
•  Burst Length: 8 (Interleave without any limit, sequential with 
starting address “000” only), 4 with tCCD = 4 which does  
not allow seamless read or write [either on the fly using A12 
or MRS]
•  Bi-directional Differential Data Strobe
•  Internal(self) calibration : Internal self calibration through ZQ 
pin (RZQ : 240 ohm ± 1%)
•  On Die Termination using ODT pin
•  Average Refresh Period 7.8us at lower than TCASE 85°C, 
3.9us at 85°C < TCASE ≤ 95°C
•  Asynchronous Reset
•  PCB : Height 0.740” (18.75mm), double sided component
DRAM Supported: Kingston F-Die
SPECIFICATIONS
CL(IDD)  
9 cycles
Row Cycle Time (tRCmin)  
49.5ns (min.)
Refresh to Active/Refresh  
90ns 
Command Time (tRFCmin)
Row Active Time (tRASmin)  
36ns (min.)
Power  
1.800 W (operating)
UL Rating  
94 V - 0
Operating Temperature  
0° C to 85° C
Storage Temperature  
-55° C to +100° C
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