Kingston Technology 3x2GB DDR3, 1066MHz, ECC, CL7, DIMM KVR1066D3S8R7SK3/6G 数据表

产品代码
KVR1066D3S8R7SK3/6G
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KVR1066D3S8R7SK3/6G
6GB (2GB 256M x 72-Bit x 3 pcs.) PC3-8500
CL7 Registered w/Parity 240-Pin DIMM Kit
DESCRIPTION
ValueRAM's KVR1066D3S8R7SK3/6G is a kit of three
256M x 72-bit (2GB) DDR3-1066 CL7 SDRAM (Synchronous
DRAM), registered w/parity, 1Rx8 ECC memory modules,
based on nine 256M x 8-bit DDR3-1066 FBGA components per
module. Total kit capacity is 6GB. The SPDs are programmed
to JEDEC standard latency DDR3-1066 timing of 7-7-7. Each
240-pin DIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:
FEATURES
JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
533MHz fCK for 1066Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 6 (DDR3-1066)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
On-DIMM thermal sensor (Grade B)
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), double  sided  component
Document No. VALUERAM0977-001.A00     05/18/11     Page 1
Memory Module Specifi cations
SPECIFICATIONS
CL(IDD)
7 cycles
Row Cycle Time (tRCmin)
50.63ns (min.)
Refresh to Active/Refresh
160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin)
37.5ns (min.)
Power (Operating)
1.465 W* (per module)
UL Rating
94 V - 0
Operating Temperature
0
o
 C to 85
o
 C
Storage Temperature
-55
o
 C to +100
o
 C
*Power will vary depending on the SDRAM and
 Register/PLL used.
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