Kingston Technology 4GB 1066MHz DDR3 Kit KVR1066D3S7/4GBK 数据表

4GB 2Rx8 512M x 64-Bit PC3-8500
CL7 204-Pin SODIMM

This document describes ValueRAM's 512M x 64-bit (4GB)

DDR3-1066 CL7 SDRAM (Synchronous DRAM), 2Rx8  memory

module, based on sixteen 256M x 8-bit DDR3-1333 FBGA

components. The SPD is programmed to JEDEC standard

latency DDR3-1066 timing of 7-7-7 at 1.5V. This 204-pin

SODIMM uses gold contact fingers. The electrical and me-

chanical specifications are as follows:

•

JEDEC standard 1.5V (1.425V ~1.575V) Power Supply

•

VDDQ = 1.5V (1.425V ~ 1.575V)

•

533MHz fCK for 1066Mb/sec/pin

•

8 independent internal bank

•

Programmable CAS Latency: 8, 7, 6

•

Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

•

Programmable CAS Write Latency(CWL) = 6 (DDR3-1066)

•

8-bit pre-fetch

•

Burst Length: 8 (Interleave without any limit, sequential with

starting address “000” only), 4 with tCCD = 4 which does not

allow seamless read or write [either on the fly using A12 or

MRS]

•

Bi-directional Differential Data Strobe

•

Internal(self) calibration : Internal self calibration through ZQ

pin (RZQ : 240 ohm ± 1%)

•

On Die Termination using ODT pin

•

Average Refresh Period 7.8us at lower than TCASE 85°C,

3.9us at 85°C < TCASE < 95°C

•

Asynchronous Reset

•

PCB: Height 1.18” (30mm), double sided component

Memory Module Specifi cations

*Power will vary depending on the SDRAM used.

CL(IDD)

7 cycles

Row Cycle Time (tRCmin)

50.63ns (min.)

Refresh to Active/Refresh

160ns (min.)

Command Time (tRFCmin)

Row Active Time (tRASmin)

37.5ns (min.)

Power (Operating)

 1.320 W*

UL Rating

94 V - 0

Operating Temperature

0

o

 C to 85

o

 C

Storage Temperature

-55

o

 C to +100

o

 C

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