Kingston Technology 4GB DDR3 1333MHz Kit KVR1333D3E9S/4GHB 数据表

Memory Module Specifications

4GB 2Rx8 512M x 72-Bit DDR3-1333
CL9 ECC 240-Pin DIMM

Kingston.com

Document No. VALUERAM0954-001.A00    04/06/11    Page 1

This document describes ValueRAM’s 512M x 72-bit (4GB) 
2Rx8 DDR3-1333 CL9 SDRAM (Synchronous DRAM) ECC 
memory module, based on eighteen 256Mx 8-bit DDR3-1333 
FBGA components. The SPD is programmed to JEDEC  
standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 
240-pin DIMM uses gold contact fingers and requires +1.5V. 
The electrical and mechanical specifications are as follows:

CL(IDD) 

9 cycles

Row Cycle Time (tRCmin) 

49.5ns (min.)

Refresh to Active/Refresh  

160ns 

Command Time (tRFCmin)

Row Active Time (tRASmin) 

36ns (min.)

Power  

2.338 W (operating per module)

UL Rating 

94 V - 0

Operating Temperature  

0° C to 85° C

Storage Temperature  

-55° C to +100° C

•  JEDEC standard 1.5V ± 0.075V Power Supply
•  VDDQ = 1.5V ± 0.075V
•  667MHz fCK for 1333Mb/sec/pin
•  8 independent internal bank
•  Programmable CAS Latency: 6,7,8,9
•  Posted CAS
•  Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
•  Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
•  8-bit pre-fetch
•  Burst Length: 8 (Interleave without any limit, sequential with    

starting address “000” only), 4 with tCCD = 4 which does not  
allow seamless read or write [either on the fly using A12 or MRS]

•  Bi-directional Differential Data Strobe
•  Internal(self) calibration : Internal self calibration through ZQ pin 

(RZQ : 240 ohm ± 1%)

•  On Die Termination using ODT pin
•  Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us 

at 85°C < TCASE ≤ 95°C

•  Asynchronous Reset
•  Thermal Sensor Grade B
•  PCB : Height 1.18” (30.00mm) double-sided component 
•  RoHS Compliant

Hynix B-Die

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