Transcend TS4GUSDHC10 用户手册
m
m
m
i
i
i
c
c
c
r
r
r
o
o
o
S
S
S
D
D
D
H
H
H
C
C
C
C
C
C
a
a
a
r
r
r
d
d
d
s
s
s
e
e
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High Capacity microSD Class10 Card
Transcend Information Inc.
3
Bus Operating Conditions
• General
Parameter
Symbol
Min.
Max.
Unit
Remark
Peak voltage on all lines
-0.3
V
DD
+0.3
V
All Inputs
Input Leakage Current
-10
10
µA
All Outputs
Output Leakage Current
-10
10
µA
• Power Supply Voltage
Parameter
Symbol
Min.
Max.
Unit
Remark
Supply voltage
V
DD
2.7
3.6
V
Output High Voltage
V
OH
0.75* V
DD
V
I
OH
=-100uA@V
DD
Min.
Output Low Voltage
V
OL
0.125* V
DD
V
I
OL
=100uA@V
DD
Min.
Input High Voltage
V
IH
0.625* V
DD
V
DD
+0.3
V
Input Low Voltage
V
IL
V
SS
-0.3
0.25* V
DD
V
Power up time
250
ms
From 0v to V
DD
Min.
• Current Consumption
The current consumption is measured by averaging over 1 second.
• Before first command: Maximum 15 mA
• During initialization: Maximum 100 mA
• Before first command: Maximum 15 mA
• During initialization: Maximum 100 mA
• Operation in Default Mode: Maximum 100 mA
• Operation in High Speed Mode: Maximum 200 mA
• Operation in High Speed Mode: Maximum 200 mA
• Operation with other functions: Maximum 500 mA.
•
Bus Signal Line Load
The total capacitance C
L
the CLK line of the SD Memory Card bus is the sum of the bus master capacitance C
HOST
, the bus
capacitance C
BUS
itself and the capacitance C
CARD
of each card connected to this line:
C
L
= C
HOST
+ C
BUS
+ Ν*C
CARD
Where N is the number of connected cards.
Parameter
Symbol
Min.
Max.
Unit
Remark
Pull-up resistance
R
CMD
R
DAT
10
100
kΩ
To prevent bus floating
Bus signal line capacitance
C
L
40
pF
1 card
C
HOST
+C
BUS
shall not exceed
30 pF