Kingston Technology 4GB DDR3 1333MHz Kit KVR1333D3E9S/4GEC 数据表

4GB 2Rx8 512M x 72-Bit PC3-10600
CL9 240-Pin ECC DIMM

This document describes ValueRAM's 512M x 72-bit (4GB)

DDR3-1333 CL9 SDRAM (Synchronous DRAM), 2Rx8, ECC

memory module, based on eighteen 256M x 8-bit DDR3-1333

FBGA components. The SPD is programmed to JEDEC stan-

dard latency DDR3-1333 timing of 9-9-9. This 240-pin DIMM

uses gold contact fingers. The electrical and mechanical

specifications are as follows:

•

JEDEC standard 1.5V (1.425V ~1.575V) Power Supply

•

VDDQ = 1.5V (1.425V ~ 1.575V)

•

667MHz fCK for 1333Mb/sec/pin

•

8 independent internal bank

•

Programmable CAS Latency: 9, 8, 7, 6

•

Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

•

Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)

•

8-bit pre-fetch

•

Burst Length: 8 (Interleave without any limit, sequential with

starting address “000” only), 4 with tCCD = 4 which does not

allow seamless read or write [either on the fly using A12 or

MRS]

•

Bi-directional Differential Data Strobe

•

Thermal Sensor Grade B

•

Internal(self) calibration : Internal self calibration through ZQ

pin (RZQ : 240 ohm ± 1%)

•

On Die Termination using ODT pin

•

Average Refresh Period 7.8us at lower than TCASE 85°C,

3.9us at 85°C < TCASE < 95°C

•

Asynchronous Reset

•

PCB: Height 1.18” (30mm), double sided component

Memory Module Specifi cations

Elpida (C-Die)

CL(IDD)

9 cycles

Row Cycle Time (tRCmin)

49.5ns (min.)

Refresh to Active/Refresh

160ns (min.)

Command Time (tRFCmin)

Row Active Time (tRASmin)

36ns (min.)

Power (Operating)

 2.338 W*

UL Rating

94 V - 0

Operating Temperature

0

o

 C to 85

o

 C

Storage Temperature

-55

o

 C to +100

o

 C

*Power will vary depending on the SDRAM used.

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