Kingston Technology 4GB DDR3 1333MHz Module KVR1333D3LD8R9SL/4GEC 数据表

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KVR1333D3LD8R9SL/4GEC
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KVR1333D3LD8R9SL/4GEC
4GB 2Rx8 512M x 72-Bit PC3-10600
CL9 Registered w/Parity 240-Pin DIMM
DESCRIPTION
This document describes ValueRAM's 512M x 72-bit (4GB)
DDR3L-1333 CL9 SDRAM (Synchronous DRAM), low voltage,
registered w/parity, 2Rx8, ECC, VLP (very low profile) memory
module, based on eighteen 256M x 8-bit DDR3L-1333 FBGA
components. The SPD is programmed to JEDEC standard
latency DDR3-1333 timing of 9-9-9 at 1.5V. This 240-pin DIMM
uses gold contact fingers. The electrical and mechanical
specifications are as follows:
FEATURES
JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
On-DIMM thermal sensor (Grade B)
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB : Height 0.740” (18.75mm), double  sided  component
Document No. VALUERAM01012-001.A00     08/05/11     Page 1
Memory Module Specifi cations
SPECIFICATIONS
CL(IDD)
9 cycles
Row Cycle Time (tRCmin)
49.5ns (min.)
Refresh to Active/Refresh
160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin)
36ns (min.)
Power (Operating)
(1.35V) = TBD*
(1.50V) = TBD*
UL Rating
94 V - 0
Operating Temperature
0
o
 C to 85
o
 C
Storage Temperature
-55
o
 C to +100
o
 C
*Power will vary depending on the SDRAM and
 Register/PLL used.
Continued >>
DRAM Supported: Elpida C-Die