Transcend 256 MB DDR DDR400 Unbuffer Non-ECC Memory TS32MLD64V4F 用户手册
产品代码
TS32MLD64V4F
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184PIN DDR400 Unbuffered DIMM
256MB With 32Mx8 CL2.5
Transcend Information Inc.
1
Description
The TS32MLD64V4F is a 32M x 64bits Double Data Rate
SDRAM high-density for DDR400.The TS32MLD64V4F
consists of 8pcs CMOS 32Mx8 bits Double Data Rate
SDRAMs in 66 pin TSOP-II 400mil packages and a 2048
bits serial EEPROM on a 184-pin printed circuit board.
The TS32MLD64V4F is a Dual In-Line Memory Module
and is intended for mounting into 184-pin edge connector
sockets.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible
on both edges of DQS. Range of operation frequencies,
programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
Features
• Power supply: VDD: 2.6V ± 0.1V, VDDQ: 2.6V ± 0.1V
• Max clock Freq: 200MHZ.
• Double-data-rate architecture; two data transfers per
• Max clock Freq: 200MHZ.
• Double-data-rate architecture; two data transfers per
clock cycle
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transition with CK transition
• Auto and Self Refresh 7.8us refresh interval.
• Data I/O transactions on both edge of data strobe.
• Edge aligned data output, center aligned data
• Serial Presence Detect (SPD) with serial EEPROM
• SSTL-2 compatible inputs and outputs.
• MRS cycle with address key programs.
• DLL aligns DQ and DQS transition with CK transition
• Auto and Self Refresh 7.8us refresh interval.
• Data I/O transactions on both edge of data strobe.
• Edge aligned data output, center aligned data
• Serial Presence Detect (SPD) with serial EEPROM
• SSTL-2 compatible inputs and outputs.
• MRS cycle with address key programs.
CAS Latency (Access from column address): 2.5
Burst Length (2,4,8)
Data Sequence (Sequential & Interleave)
Placement
PCB: 09-1860
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