Transcend 128MB DDR266 Unbuffer Non-ECC Memory TS16MLD64V6D5 用户手册

 

 

The TS16MLD64V6D5 is a 16M x 64bits Double Data 

Rate SDRAM high density for DDR266. The 

TS16MLD64V6D5 consists of 8pcs CMOS 16Mx8 bits 

Double Data Rate SDRAMs in 66 pin TSOP-II 400mil 

packages and a 2048 bits serial EEPROM on a 184-pin 

printed circuit board. The TS16MLD64V6D5 is a Dual 

In-Line Memory Module and is intended for mounting into 

184-pin edge connector sockets. 

Synchronous design allows precise cycle control with the 

use of system clock. Data I/O transactions are possible 

on both edges of DQS. Range of operation frequencies, 

programmable latencies allow the same device to be 

useful for a variety of high bandwidth, high performance 

memory system applications. 

 

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Power supply: VDD: 2.5V ± 0.2V, VDDQ: 2.5V ± 0.2V 

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Max clock Freq: 133MHZ. 

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Double-data-rate architecture; two data transfers per 

clock cycle 

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Differential clock inputs (CK and /CK) 

•  DLL aligns DQ and DQS transition with CK transition 
•  Auto and Self Refresh 15.6us refresh interval. 

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Data I/O transactions on both edge of data strobe.

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Edge aligned data output, center aligned data input.

•  Serial Presence Detect (SPD) with serial EEPROM   
•    SSTL-2 compatible inputs and outputs. 
•    MRS cycle with address key programs. 

        CAS Latency (Access from column address) : 2.5 

    Burst Length (2,4,8) 

    Data Sequence (Sequential & Interleave) 

A

B

D

C

I

G

F

E

H

 
                

 

PCB: 09-1395 

Transcend Information Inc.

 

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