Transcend 1GB DDR333 Unbuffer Non-ECC Memory TS128MLD64V3J 用户手册
产品代码
TS128MLD64V3J
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8
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184PIN DDR333 Unbuffered DIMM
1024MB With 64Mx8 CL2.5
Transcend Information Inc.
1
Description
The TS128MLD64V3J is a 64Mx64bits Double Data Rate
SDRAM high-density Module for DDR333. The
TS128MLD64V3J consists of 16pcs CMOS 64Mx8 bits
Double Data Rate SDRAMs in 66 pin TSOP-II 400mil
packages and a 2048 bits serial EEPROM on a 184-pin
printed circuit board. The TS128MLD64V3J is a Dual
In-Line Memory Module and is intended for mounting into
184-pin edge connector sockets.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible
on both edges of DQS. Range of operation frequencies,
programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
Features
• Power supply: VDD: 2.5V ± 0.2V, VDDQ: 2.5V ±0.2V
• Max clock Freq: 166MHZ.
• Double-data-rate architecture; two data transfers per
• Max clock Freq: 166MHZ.
• Double-data-rate architecture; two data transfers per
clock cycle
• Differential clock inputs (CK and /CK)
• Burst Mode Operation.
• Auto and Self Refresh.
• Data I/O transactions on both edge of data strobe.
• Edge aligned data output, center aligned data input.
• Serial Presence Detect (SPD) with serial EEPROM
• SSTL-2 compatible inputs and outputs.
• MRS cycle with address key programs.
• Burst Mode Operation.
• Auto and Self Refresh.
• Data I/O transactions on both edge of data strobe.
• Edge aligned data output, center aligned data input.
• Serial Presence Detect (SPD) with serial EEPROM
• SSTL-2 compatible inputs and outputs.
• MRS cycle with address key programs.
CAS Latency (Access from column address): 2.5
Burst Length (2, 4, 8 )
Data Sequence (Sequential & Interleave)
Placement
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PCB: 09-1860