Kingston Technology Memory 1GB 800MHz DDR2 Non-ECC Low-Latency CL4 KHX6400D2LL/1G 产品宣传页

产品代码
KHX6400D2LL/1G
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Memory Module Specification
Document No. 4804404-001.B00
05/18/06
KHX6400D2LL/1G
1GB 128M x 64-Bit PC2-6400
CL4 240-Pin DIMM
KEYED
Page 1
DESCRIPTION:
This document describes Kingston's low-latency 128M x 64-bit 1GB (1024MB) DDR2-800 CL4
SDRAM (Synchronous DRAM) memory module, based on sixteen 64M x 8-bit DDR2 FBGA
components. This module has been tested to run at DDR2 800MHz at low latency timing of 4-4-4-12
at 2.0V. The SPD is programmed to JEDEC standard latency 667Mhz timing of 5-5-5-15 at 1.8V.
This 240-pin DIMM uses gold contact fingers and requires +1.8V. The electrical and mechanical
specifications are as follows:
FEATURES:
Power supply :   Vdd:  1.8V ± 0.1V, Vddq:  1.8V ± 0.1V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Differential clock inputs(CK and CK)
DLL aligns  DQ and DQS transition with CK transition
Programmable Read latency 3, 4, 5 (clock)
Burst Length: 4, 8 (Interleave/nibble sequential)
Programmable Burst type (sequential & interleave)
Timing Reference: 667MHz 5-5-5-15 at +1.8V / 800MHz 4-4-4-12 at +2.0V
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval (8K/64ms refresh)
Serial presence detect with EEPROM
High Performance Heat Spreader
PCB : Height 1.180” (30.00mm), double sided component
PERFORMANCE:
Clock Cycle Time (tCK) CL=5
3ns (min.) / 8ns (max.)
Row Cycle Time (tRC)
54ns (min.)
Refresh to Active/Refresh Command Time (tRFC)
105ns
Row Active Time (tRAS)
39ns (min.) / 70,000ns (max.)
Single Power Supply of
+1.8V (+/- .1V)
Power
1.922 W (operating)
UL Rating
94 V - 0
Operating Temperature
0
o
 C to 55
o
 C
Storage Temperature
-55
o
 C to +125
o
 C
T E C H N O L O G Y