Transcend 1GB DDR266 ECC Unbuffer Memory TS128MLD72V6E 用户手册
产品代码
TS128MLD72V6E
T
T
T
S
S
S
1
1
1
2
2
2
8
8
8
M
M
M
L
L
L
D
D
D
7
7
7
2
2
2
V
V
V
6
6
6
E
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E
184PIN DDR266 Unbuffered DIMM
1GB With 64Mx4 CL2.5
Transcend Information Inc.
1
Description
The TS128MLD72V6E is a 128Mx72bits Double Data
Rate SDRAM high density for DDR266. The
TS128MLD72V6E consists of 36pcs CMOS 64Mx4 bits
Double Data Rate SDRAMs in 66 pin TSOP-II 400mil
packages and a 2048 bits serial EEPROM on a 184-pin
printed circuit board. The TS128MLD72V6E is a Dual
In-Line Memory Module and is intended for mounting into
184-pin edge connector sockets.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible
on both edges of DQS. Range of operation frequencies,
programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
Features
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Power supply: VDD: 2.5V ± 0.2V
VDDQ: 2.5V ± 0.2V
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Max clock Freq: 133MHZ.
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Double-data-rate architecture; two data transfers per
clock cycle
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Differential clock inputs (CK and /CK)
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DLL aligns DQ and DQS transition with CK transition
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Auto and Self Refresh 7.8us refresh interval.
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Data I/O transactions on both edge of data strobe.
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Edge aligned data output, center aligned data
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Serial Presence Detect (SPD) with serial EEPROM
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SSTL-2 compatible inputs and outputs.
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MRS cycle with address key programs.
CAS Latency (Access from column address): 2.5
Burst Length (2, 4, 8)
Data Sequence (Sequential & Interleave)
Placement
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PCB: 09-1670