Kingston Technology KVR1333D3N8K2/2G 数据表

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Memory Module Specification
Document No. VALUERAM0576-001.A00
06/27/08
KVR1333D3N8K2/2G
2GB (1GB 128M x 64-Bit x 2 pcs.) PC3-10600
CL8 240-Pin DIMM Kit
Page 1
DESCRIPTION:
ValueRAM's KVR1333D3N8K2/2G is a kit of two 128M x 64-bit 1GB (1024MB) DDR3-1333 CL8 SDRAM (Synchro-
nous DRAM) memory modules, based on sixteen 64M x 8-bit DDR3-1333 FBGA components per module. The SPDs
are programmed to JEDEC standard latency 1333Mhz timing of 8-8-8 at 1.5V. Each 240-pin DIMM uses gold contact
fingers and requires +1.5V. The electrical and mechanical specifications are as follows:
FEATURES:
JEDEC standard 1.5V ± 0.075V Power Supply
VDDQ = 1.5V ± 0.075V
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 5,6,7,8,9,10
Posted CAS
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 8(DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4
which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C
Asynchronous Reset
1066Mbps CL7 doesn’t have backward compatibility with 800Mbps CL5
PCB : Height 1.180” (30.00mm), double  sided  component
PERFORMANCE:
CL(IDD)
8 cycles
Row Cycle Time (tRCmin)
48ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin)
90ns
Row Active Time (tRASmin)
36ns (min.)
Power
TBD W (operating per module)
UL Rating
94 V - 0
Operating Temperature
0
o
 C to 85
o
 C
Storage Temperature
-55
o
 C to +100
o
 C