Super Talent Technology T667SC512 用户手册

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页码 15
 
 
 
200-Pin SODIMM                                                                            DDR2 SDRAM 
 
 
 
 http://www.supertalent.com/oem                            
                            Products and Specifications discussed herein are subject to change without notice 
 
                                  
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© 2006 Super Talent Tech., Corporation.
 
 
1.0 Feature 
 
•  JEDEC standard 1.8V +/- 0.1V Power Supply 
•  VDDQ = 1.8V ± 0.1V 
•  200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 
400MHz fCK for 800Mb/sec/pin 
•  4 Banks 
•  Posted CAS 
•  Programmable CAS Latency: 3, 4, 5 
•  Programmable Additive Latency: 0, 1 , 2 , 3 and 4 
•  Write Latency(WL) = Read Latency(RL) –1 
•  Burst Length: 4 , 8(Interleave/nibble sequential) 
•  Programmable Sequential / Interleave Burst Mode 
•  Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature) 
•  Off-Chip Driver(OCD) Impedance Adjustment  
•  On Die Termination with selectable values(50/75/150 ohms or disable) 
•  PASR(Partial Array Self Refresh) 
•  Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C- support 
High Temperature Self-Refresh rate enable feature 
•  Package: 60ball FBGA - 64Mx8 , 84ball FBGA - 32Mx16 
•  All of Lead-free products are compliant for RoHS 
•  Gold plated contacts